Neutron radiation damage and recovery studies of SiPMs

Tsang, T.; Rao, T.; Stoll, S. P.

doi:10.1088/1748-0221/11/12/p12002

Cited by 20 publications

(16 citation statements)

References 9 publications

(13 reference statements)

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“…Tsang has presented results of annealing at +250 • C, using forward bias with the SiPM current reaching 10 mA, [26]. A remarkable effect of this high temperature annealing is demonstrated in Fig.…”

Section: Annealing Effectsmentioning

confidence: 90%

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Radiation damage of SiPMs

Garutti

Musienko

2019

Nuclear Instruments and Methods in Physics Research Section A:

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The current understanding of radiation tolerance of Silicon Photomultipliers (SiPMs) is reviewed. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of irradiated SiPMs with X-ray, gamma, electron, proton and neutron sources are presented. The most critical effect of radiation on SiPMs is the increase of dark count rate, which makes it impossible to resolve signals generated by a single photon from the noise. Methods to characterize irradiated SiPMs after their single photo-electron resolution is lost are discussed. Due to the important similarity in the operation below the breakdown voltage, also studies on radiation damage of avalanche photo-diodes (APD) are reviewed. Finally, ideas are presented on how to approach the development of radiation hard SiPMs in the future.

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Section: Annealing Effectsmentioning

confidence: 90%

“…Tsang and co-authors demonstrate in Ref. [26] that the same SiPM cooled at 84 K still resolves single photons. Figure 9: Single photoelectron charge signal pulses at V − V bd =3 V (b) before irradiation, (c) after neutron irradiation to Φ eq = 10 9 cm −2 .…”

Section: Radiation Damage Of Silicon Photomultipliersmentioning

confidence: 97%

Radiation damage of SiPMs

Garutti

Musienko

2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…coefficient of polysilicon quenching resistors [1]. Recent models, such as those we tested, have metal quenching resistors with small temperature coefficient, which allow to operate the SiPMs down to liquid nitrogen (77 K) with minimal impact on the signal shape [25]. At liquid nitrogen temperature (77 K) the thermal generation of carriers is strongly suppressed, and the DCR is not of thermal origin anymore.…”

Section: Operation At Cryogenic Temperaturementioning

confidence: 99%

“…Different classes of lattice defects are known to anneal at different temperatures [24]. Recovery of about one order of magnitude at room temperature and two orders of magnitude at 85 K has been reported for SiPMs irradiated up to 10 9 n eq /cm 2 and annealed at 250 • C with forward bias applied [25].…”

Section: Recovery By Annealingmentioning

confidence: 99%

Single photon detection with SiPMs irradiated up to 1014 cm−2 1-MeV-equivalent neutron fluence

Calvi

Carniti

Gotti

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor tolerance to radiation. At room temperature the large increase in dark count rate makes single photon detection practically impossible already at 10 11 cm −2 1-MeV-equivalent neutron fluence. The neutron fluences foreseen by many subdetectors to be operated at the high luminosity LHC range up to 10 14 cm −2 1-MeV-equivalent. In this paper we present the effects of such high neutron fluences on Hamamatsu and SensL SiPMs of different cell size. The advantage of annealing at high temperature (up to 175 • C) is discussed. We demonstrate that, after annealing, operation at the single photon level with a SiPM irradiated up to 10 14 cm −2 1-MeV-equivalent neutron fluence is possible at cryogenic temperature (77 K) with a dark count rate below 1 kHz.

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“…However, application of SiPM in neutron detectors also raises a question on their radiation hardness. Several studies investigating this aspect were performed (see, e.g., [5,[8][9][10][11]), involving both cold and fast neutrons. The results suggest that for applications in small angle neutron scattering (SANS) experiments, a SiPM lifetime of up to 10 years can be expected [5].…”

Section: Introductionmentioning

confidence: 99%

SiPM-based neutron Anger camera with auto-calibration capabilities

Morozov¹,

Marcos²,

Margato³

et al. 2019

J. Inst.

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We present characterization results of a neutron Anger camera based on a lithium-6 loaded cerium activated silicate glass scintillator (33.3 x 33.3 x 1 mm 3 ) and an array of 64 silicon photomultipliers. Reconstruction of the scintillation events is performed with a statistical method, implemented on a graphics processing unit (GPU). We demonstrate that the light response model of the detector can be obtained from flood irradiation calibration data using an unsupervised iterative procedure. The useful field of view is 28 x 28 mm 2 . The spatial resolution measured at 2.5 Å neutron beam is better than 0.6 mm FWHM and the energy resolution at the neutron peak is 11%.

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Neutron radiation damage and recovery studies of SiPMs

Cited by 20 publications

References 9 publications

Radiation damage of SiPMs

Radiation damage of SiPMs

Single photon detection with SiPMs irradiated up to 1014 cm−2 1-MeV-equivalent neutron fluence

SiPM-based neutron Anger camera with auto-calibration capabilities

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