Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

Schrantz, G.A.; Vonno, N. W. van; Krull, W.; Rao, M. A.; Long, S.I.; Kroemer, H.

doi:10.1109/23.25516

Cited by 26 publications

(4 citation statements)

References 13 publications

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“…Thus, , can be excluded from the further analysis of radiation-induced effects. It should be noted that a similar behavior has been observed in neutron-irradiated AlGaAs/GaAs HBTs [7], and electronirradiated InP/InGaAs [1] and AlGaAs/GaAs devices [8]. The two remaining components of the base current in (5) have been analyzed using the following expressions:…”

Section: B Gummel Plots and Gain Degradationsmentioning

confidence: 76%

“…6. Unusually high ideality factors (more than 2.0) observed at the high doses are typically attributed to SCR recombination involving defects with a distribution of energy levels in the band gap, or to the so-called recombination-assisted tunneling through the B-E SCR [7], [9]. An analytical model for the collector and the base current was developed and used to study relative contribution of the different components of in order to explain the observed ideality factors.…”

Section: B Gummel Plots and Gain Degradationsmentioning

confidence: 99%

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Neutron irradiation effects in InP/InGaAs single heterojunction bipolar transistors

Shatalov

Subramanian

Dentai³

2000

IEEE Trans. Nucl. Sci.

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In this paper we report the effects of epi-thermal and high energy neutron irradiation on the DC characteristics of InP/InGaAs heterojunction bipolar transistors. Significant current gain degradation and collector-emitter offset voltage o shift are the two predominant effects observed on the devices irradiated up to 10 15 n/cm 2 . The current gain degradation is attributed to the increasing base current due to the increased recombination and tunnel-assisted trapping components. Theo shift is explained by the growing base-collector (B-C) junction current caused by the defects introduced in the B-C space charge region (SCR). High, 2, values of the base current ideality factor are modeled using the Shockley-Read-Hall (SRH) recombination and tunnel-assisted trapping in the base-emitter (B-E) SCR. Finally, devices with the higher emitter perimeter-to-area (P/A) ratio (smaller emitter) showed less degradation than the larger devices, suggesting that the degradation is primarily due to the change of the bulk properties.

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Section: B Gummel Plots and Gain Degradationsmentioning

confidence: 76%

Section: B Gummel Plots and Gain Degradationsmentioning

confidence: 99%

Neutron irradiation effects in InP/InGaAs single heterojunction bipolar transistors

Shatalov

Subramanian

Dentai³

2000

IEEE Trans. Nucl. Sci.

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“…At least one study suggests that GaAs/AlGaAs HBTs are significantly more rad-tolerant than Si-based HBTs. 30 It is encouraging that when III-V HBTs are fashioned into simple circuits, the circuits exhibit no additional sensitivity to radiation damage beyond that inherent in the HBTs themselves. 5 Such is not always the case for silicon-based circuits.…”

Section: 11conventional Electronic Devicesmentioning

confidence: 98%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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“…Previous results on AlGaAs/GaAs HBTs have indicated that these devices have superior ␥-radiation resistance to GaAs metal-semiconductor field effect transistors ͑MESFETs͒ due to the higher doping levels in the active regions. [11][12][13][14][15][16][17] There is little information available on the response of InGaP/GaAs HBTs to ionizing radiation. The replacement of AlGaAs as the emitter material by InGaP has been prompted by improved resistance to oxidation, lower defect levels, higher etch selectivity, and improved contact resistances.…”

mentioning

confidence: 99%

Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors

Luo¹,

Johnson²,

Ren³

et al. 2002

J. Electrochem. Soc.

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Large-area (75 μm emitter diameter) InGaP/GaAs heterojunction bipolar transistors (HBTs) were irradiated either with 40 MeV protons at fluences up to 5×109 cm−2 or with Co60 γ-rays to maximum doses of 500 Mrad. Both types of radiation produced increases in generation-recombination leakage current in the emitter-base junction. The dc current gain of the HBTs decreased monotonically with increasing γ-ray dose, but was found to increase slightly for proton irradiation due to differential changes in the base and collector resistances. The HBTs appear to be well-suited to space or nuclear industry applications. © 2002 The Electrochemical Society. All rights reserved.

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Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

Cited by 26 publications

References 13 publications

Neutron irradiation effects in InP/InGaAs single heterojunction bipolar transistors

Neutron irradiation effects in InP/InGaAs single heterojunction bipolar transistors

Radiation Effects in Iii-v Semiconductor Electronics

Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors

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