Neutron Irradiation, Amorphous Transformation and Agglomeration Effects on the Permittivity of Nanocrystalline Silicon Carbide (3C-SiC)

Abstract

Nanocrystalline 3C-SiC is irradiated by neutron flux ([Formula: see text][Formula: see text]n/cm2s) up to 20[Formula: see text]h in the TRIGA Mark II type research reactor. At the first stage, silicon carbide nanoparticles were analyzed by scanning electron microscope (SEM) and transmission electron microscope (TEM) devices before and after neutron irradiation. Amorphous transformation and agglomeration effects on the permittivity of nanocrystalline silicon carbide (3C-SiC) were comparisons investigated before and after neutron irradiation. Dielectric spectroscopies of nanocrystalline 3C-SiC have been conducted at the frequency ranges of 0.1[Formula: see text]Hz–2.5[Formula: see text]MHz and temperature ranges of 100–400[Formula: see text]K. Real and imaginary parts of the permittivity of the nanomaterial were analyzed for comparison before and after neutron irradiation. Neutron irradiation increased dopant elements concentration in the nanocrystalline 3C-SiC particles, and that directly affects dielectric polarization and increased permittivity. All the mechanisms of the observed effects are given in the work.