Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs

Abstract

The neutron-induced single-event-transient (SET) response of 22-nm technology ultrathin-body fully-depleted silicon-on-insulator transistors is examined. Simulation resultsshow that the impacts of ground plane doping and quantum effects on SETs are relatively small. The SET characteristics and collected charge are strike-location sensitive. The most SETsensitive region in ultrathin-body fully-depleted SOI transistors is located near the drain region. The transient current peak is strongly affected by substrate bias. In contrast, the total collected charge depends only weakly on substrate bias. Circuits that are sensitive to total collected charge (e.g., SRAMs) may not be influenced by substrate bias, but substrate bias will impact the SET sensitivity of combinational logic.

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

“…The TFET represents a good solution due to its low power consumption. However, the failure of electronic devices induced by single-eventtransient (SET) effects could have an inestimable impact on spacecraft [19,20]. M Hemmat et al have discussed soft-error in relation to the circuits of III-V TFETs [21].…”