2003
DOI: 10.1109/tns.2003.821390
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Neutron dosimetry with planar silicon p-i-n diodes

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Cited by 27 publications
(16 citation statements)
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References 9 publications
(15 reference statements)
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“…They are ion implanted p-i-n diodes made of high resistivity silicon ( k ) [5], [16] with intrinsic part length of 1 mm and a cross section of and implants of 1.2 mm at each side of the bulk. Measurements of relative readout voltage increase in 2.35 T magnetic field in the JSI magnet at different angles made before and after irradiation are shown in Fig.…”
Section: A Cmrp Diodesmentioning
confidence: 99%
“…They are ion implanted p-i-n diodes made of high resistivity silicon ( k ) [5], [16] with intrinsic part length of 1 mm and a cross section of and implants of 1.2 mm at each side of the bulk. Measurements of relative readout voltage increase in 2.35 T magnetic field in the JSI magnet at different angles made before and after irradiation are shown in Fig.…”
Section: A Cmrp Diodesmentioning
confidence: 99%
“…The C1 structure was irradiated up to the dose of 10 Gy ( n/cm ) and the C2 structure was irradiated up to the dose of 20 Gy ( n/cm ) by fast neutrons with average energy about 20 MeV on the Fast Neutron Therapy facility at Harper hospital in Detroit. The neutron beam intensity was n cm s of equivalent 1 MeV neutrons in Si [3]. We have used a Keithly digital bridge for I-V and C-V measurements that allows obtaining the accuracy of 2%.…”
Section: Circular Sensorsmentioning
confidence: 99%
“…In [2] the influence of the change in the resistivity of silicon was investigated for silicon p-i-n diodes with rectangular geometry. It was shown previously [3] that silicon planar structures demonstrated high neutron sensitivity (from 0.14 to 3.3 mV/cGy for different readout currents) and could be used for the neutron integral dosimetry, for tissue equivalent neutron dosimetry for biological dose monitoring. Small sizes of these structures allow measuring neutron beam profiles [3].…”
mentioning
confidence: 99%
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“…For instance, another type of diode which is manufactured from the Center for Medical Physics (CMRP) [8] of the University of Wollongong (UoW), Australia, is already used at CERN for monitoring low fluences. This type of device reveals a linear response with sensitivity of when is lower than [4].…”
Section: Introductionmentioning
confidence: 99%