Neutron bombardment of single wall carbon nanohorn (SWCNH): DSC determination of the stored Wigner-Szilard energy

Cataldo, Franco; Iglesias‐Groth, Susana; Hafez, Yaser A.; Angelini, Giancarlo

doi:10.1007/s10967-013-2893-0

Cited by 15 publications

(2 citation statements)

References 30 publications

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“…However, non-equilibrium defects generated by neutron 11 , ion 12 or electron 13 , 14 bombardment, or through laser irradiation 15 , can store part of the energy transferred to the material by the incoming particles. This stored energy associated with defects can reach surprisingly large densities.…”

Section: Introductionmentioning

confidence: 99%

Using defects to store energy in materials – a computational study

Bernardi

2017

Sci Rep

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Energy storage occurs in a variety of physical and chemical processes. In particular, defects in materials can be regarded as energy storage units since they are long-lived and require energy to be formed. Here, we investigate energy storage in non-equilibrium populations of materials defects, such as those generated by bombardment or irradiation. We first estimate upper limits and trends for energy storage using defects. First-principles calculations are then employed to compute the stored energy in the most promising elemental materials, including tungsten, silicon, graphite, diamond and graphene, for point defects such as vacancies, interstitials and Frenkel pairs. We find that defect concentrations achievable experimentally (~0.1–1 at.%) can store large energies per volume and weight, up to ~5 MJ/L and 1.5 MJ/kg for covalent materials. Engineering challenges and proof-of-concept devices for storing and releasing energy with defects are discussed. Our work demonstrates the potential of storing energy using defects in materials.

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Section: Introductionmentioning

confidence: 99%

Using defects to store energy in materials – a computational study

Bernardi

2017

Sci Rep

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“…The main outcome of a fast-neutron bombardment of a substance consists in the appearance of strong displacements of atoms from their equilibrium positions, toward relatively stable interstitial sites. − This type of irradiation does not change a charge balance inside crystal lattice, in contrary to other common treatments, like electron irradiation. ,, Another potential implication of a fast-neutron bombardment, such as transmutations in a lattice because of thermal capture of neutrons by nuclei, was reported to give negligible contributions for the overwhelming majority of materials. − , Irradiation with fast neutrons typically creates a limited number of stable radiation defects; some of those may be electrically active, and hence capable to contribute to electronic transport, either as charge carriers or as scattering factors for the original charge carriers in pristine material. In pure semiconducting materials, a contribution of radiation defects may be significant, ,,− whereas in metals or semimetals with high carrier concentrations, this contribution may be minor or very moderate. , Some materials subjected to a fast-neutron irradiation also demonstrated signatures of moderate structural disordering …”

Section: Discussionmentioning

confidence: 99%

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

et al. 2016

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In this work, we systematically investigated the electrical resistivity, Hall, and magnetoresistance effects of Aldoped Mg 2 Si thermoelectrics, irradiated with a fluence of fast neutrons and consequently isochronally annealed at moderate high temperatures up to 500 °C. We found that the fastneutron bombardment itself only slightly modified the electronic properties. Meanwhile, a series of the postirradiation high-temperature anneals affected the properties dramatically. Thus, after annealing at temperatures of 275−325 °C, Mg 2 Si:Al showed pronounced jumps in both the electrical resistivity and the Hall constant values by several orders of magnitude. This unexpected electronic transition corresponded to a significant variation in the carrier concentration. We proposed that this unusual electronic transition may be related to temperature-assisted chemical bonding of the radiation defects that can involve free charge carriers in the sample, thereby tuning dramatically its transport properties. We proposed a simple model for Mg 2 Si:Al thermoelectrics, which links the chemical bonding of the interstitial Mg ions with the electronic properties of this material. This finding suggests a new avenue to tuning of electronic properties and unconventional electronic transitions in materials with a high concentration of defects.

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Spherical Onion‐Like Carbons

Bobrowska

Płońska‐Brzezińska

2020

Synthesis and Applications of Nanocarbons

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Neutron bombardment of single wall carbon nanohorn (SWCNH): DSC determination of the stored Wigner-Szilard energy

Cited by 15 publications

References 30 publications

Using defects to store energy in materials – a computational study

Using defects to store energy in materials – a computational study

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

Spherical Onion‐Like Carbons

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Neutron bombardment of single wall carbon nanohorn (SWCNH): DSC determination of the stored Wigner-Szilard energy

Cited by 15 publications

References 30 publications

Using defects to store energy in materials – a computational study

Using defects to store energy in materials – a computational study

Unconventional Electronic Properties of Mg2Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

Spherical Onion‐Like Carbons

Contact Info

Product

Resources

About

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping