2011
DOI: 10.1049/iet-pel.2009.0166
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Neutral point clamped converter for high fundamental frequency applications

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Cited by 11 publications
(3 citation statements)
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“…As a result, the voltage across a 3-level FB single switch is less than 200 V, which allows for the use of future power MOSFET switches rather than IGBTs. As previously mentioned, a 3-level topology, using the same passive components as the 2-level topology, shows half the voltage and current ripples and a consequent reduction in the losses in the switches and hardware filters which increases the efficiency [8], [9]. With reference to the previous discussion, a 3-level neutral point clamped (NPC) FB topology, which is depicted in Fig.…”
Section: A Inverter Topologymentioning
confidence: 89%
“…As a result, the voltage across a 3-level FB single switch is less than 200 V, which allows for the use of future power MOSFET switches rather than IGBTs. As previously mentioned, a 3-level topology, using the same passive components as the 2-level topology, shows half the voltage and current ripples and a consequent reduction in the losses in the switches and hardware filters which increases the efficiency [8], [9]. With reference to the previous discussion, a 3-level neutral point clamped (NPC) FB topology, which is depicted in Fig.…”
Section: A Inverter Topologymentioning
confidence: 89%
“…The power converter has a three-level neutral-pointclamp configuration arrangement in order to achieve improved alternator current waveforms and low torque ripple thereby. Further to that, the weight and size of the converter passive components are substantially reduced with respect to more common two-level converter topologies to allow a compact converter package [11].…”
Section: Dual-voltage Automotive Systemmentioning
confidence: 99%
“…The BLDCM winding current experiences high ripple current if driven from the conventional two-level inverter and very high switching frequency is required to mitigate the current ripple [22]. Three-level inverters are the most suitable solution for low-and medium-power applications, and they produce lower converter losses at >10 kHz switching frequency compared with the two-level inverter [23][24][25]. A metal oxide semiconductor field effect transistor (MOSFET)-based inverter operates with 98.6% efficiency at 80 kHz switching frequency without notable switching loss [26].…”
Section: Introductionmentioning
confidence: 99%