“…1 c—right panel). The extracted value is within the range of FSSs typically observed for these QDs 37 , 41 . Figure 1 μPL spectra from the investigated InGaAs/GaAs QD embedded in a mesa of 1.3 μm diameter at 5 K. X —exciton, X + —positive trion, X − —negative trion, XX —biexciton.…”
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of $${g}_{50K}^{(2)}\left(0\right)=0.13$$
g
50
K
(
2
)
0
=
0.13
up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance.
“…1 c—right panel). The extracted value is within the range of FSSs typically observed for these QDs 37 , 41 . Figure 1 μPL spectra from the investigated InGaAs/GaAs QD embedded in a mesa of 1.3 μm diameter at 5 K. X —exciton, X + —positive trion, X − —negative trion, XX —biexciton.…”
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of $${g}_{50K}^{(2)}\left(0\right)=0.13$$
g
50
K
(
2
)
0
=
0.13
up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance.
“…All of these overlap with the 2 nd or 3 rd telecommunication data transmission windows [12][13][14] and thus allow considering the QDashes for realization of selected issues in quantum information processing [15][16][17] and nanophotonics. 7,[18][19][20][21] Quantum dashes are formed in a common self-assembly of molecular beam epitaxy and if they can used asgrown their fabrication is less challenging than nanostructures obtained by more advanced treatment like sitecontrolled methodology [22][23][24] or strain compensation as for GaAs-based quantum dots for tuning to telecom spectral range, 25,26 which can hardly reach the 1.55 m range. In spite of the aforementioned technological and device-related perspectives, the fundamental electronic and optical properties of QDashes are still barely known.…”
The fundamental electronic and optical properties of elongated InAs nanostructures embedded in quaternary InGaAlAs barrier are investigated by means of high-resolution optical spectroscopy and many-body atomistic tight-binding theory. These wire-like shaped self-assembled nanostructures are known as quantum dashes and are typically formed during the molecular beam epitaxial growth on InP substrates. In this work we study properties of excitonic complexes confined in quantum dashes emitting in a broad spectral range from below 1.2 to 1.55 m. We find peculiar trends for the biexciton and negative trion binding energies, with pronounced trion
“…using additional strain-reducing layer to operate up to even 1.5 µm [7,8]. While InP based nanostructures have been widely studied around 1.55 µm [9][10][11], there is still not much information about their possible operation close to 1.3 µm, required for the transmission in the O-band telecommunication range.…”
Section: Introductionmentioning
confidence: 99%
“…The InAs/InGaAlAs/InP quantum dash (QDash) system is characterized by elongated in-plane geometry of the nanostructures along [1][2][3][4][5][6][7][8][9][10] direction with approximately triangular cross-sectional shape and high areal density (> 10 10 cm −2 ) [12]. The sample structure has been grown by EIKO gas source molecular beam epitaxy system using S-doped InP (001) substrates.…”
In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300 ± 40 nm spectral range, i.e. the Oband of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.
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