Neuromorphic computing based on Analog ReRAM as low power solution for edge application

Mikawa, Takumi; Yasuhara, Ryo; Kawasaki, Koji; Kouno, Kazuyuki; Ono, Takashi; Mochida, Reiji; Hayata, Yuriko; Nakayama, Masayoshi; Suwa, Hitoshi; Gohou, Y.; Kakiage, T.

doi:10.1109/imw.2019.8739720

Cited by 17 publications

(13 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…30,31 The volume increases of a-TaO x observed in the (2) V maxdependent analog reset phenomenon (+1.5 to +2.5 V in Figures 2c and S5) suggested that the resistance increases in this type of switching were produced by the electrochemical oxidation of a-TaO x (second left illustration in Figure 6b). The oxidation from air (replacement of an oxygen reservoir layer in a practical device), 5,10,28 which was suggested for I c ≥ 10 μA in the over-set, should also progress in this reset switching at approximately 150 μA and will steeply increase the resistivity of a-TaO x at the interface. The reversibility of the structural changes (Figures 2c,d and S7) and stability of the cycling characteristics (Figure 2b) indicated that the redox reactions involved in this switching are highly continuous and reversible (Figure 6b), possibly due to the low probability of phase separation in a-TaO x for 2.0 < x < 2.5.…”

Section: C-afm Observation Of Time-dependent Analogmentioning

confidence: 99%

“…A variety of neuromorphic functions, including high-performance analog resistive switching, [3][4][5][6][7][8]10,13 spike timing-dependent plasticity, 4,7 and second-order memristor characteristics, 7 have been demonstrated in thin-film devices of a-TaO x , in addition to the fact that it has been widely used as a practical material for commercial resistive random access memory (ReRAM). 3,10,28 In amorphous metal oxides, three types of analog switching phenomena have been demonstrated depending on the control parameters: (1) analog set (resistance decrease) controlled by the compliance current (I c ), 1,5,6,13 (2) analog reset (resistance increase) controlled by the maximum applied voltage (V max ), 1,3,4,6,8,13 and (3) analog set and reset by multiple voltage applications (i.e., controlled by the voltage application time). 2,4,7,8 In our measurements, all three types of phenomena were directly demonstrated by C-AFM, and the involved ionic migration was observed in the angstrom scale.…”

Section: Introductionmentioning

confidence: 99%

“…Continuous resistance changes induced by electric field application, i.e., analog (or memristive) resistive switching phenomena, have been demonstrated in nanostructured amorphous metal oxides (TaO x , HfO x , etc. ), − with advantages for applications (high neuromorphic functionality, low power consumption, and high scalability). The hardware development of oxide-based electronic synapses, however, has been hampered by the poorly understood physical mechanisms, which significantly limits function control.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Tsurumaki‐Fukuchi

Katase

Ohta

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and ångström scale imaging of the causal ion migration is demonstrated in amorphous TaO x (a-TaO x ) by conductive atomic force microscopy. Atomically flat thin films of a-TaO x , which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaO x by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaO x . The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO2 phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing.

show abstract

Section: C-afm Observation Of Time-dependent Analogmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Tsurumaki‐Fukuchi

Katase

Ohta

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Panasonic developed neuromorphic computing based on analog RRAM, resistive analog neuromorphic device (RAND), as a low power solution for edge application [116]. The authored demonstrated MNIST recognition and sensor application in which several networks could be configured at the same time.…”

Section: Analog Deep Learning Acceleratormentioning

confidence: 99%

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

Molas

Nowak

2021

Applied Sciences

View full text Add to dashboard Cite

This paper presents an overview of emerging memory technologies. It begins with the presentation of stand-alone and embedded memory technology evolution, since the appearance of Flash memory in the 1980s. Then, the progress of emerging memory technologies (based on filamentary, phase change, magnetic, and ferroelectric mechanisms) is presented with a review of the major demonstrations in the literature. The potential of these technologies for storage applications addressing various markets and products is discussed. Finally, we discuss how the rise of artificial intelligence and bio-inspired circuits offers an opportunity for emerging memory technology and shifts the application from pure data storage to storage and computing tasks, and also enlarges the range of required specifications at the device level due to the exponential number of new systems and architectures.

show abstract

“…Oxide-based resistive random-access memory (ReRAM) is emerging as a next generation non-volatile memory (NVM) for various applications, such as embedded NVM [240] , storage-class memory [224], [241] , and neuromorphic computing [242] .…”

Section: Introductionmentioning

confidence: 99%

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

Li¹

View full text Add to dashboard Cite

Xin, etc. We were fighting together all the time for the Ph.D. degree. Likewise, Mr. Liu Qifei, Ms. Huang Yajun, Mr. Liu Mingzhe, Ms. Zhang Cancan, and my other life-long friends have shown me their support and encouragement from time to time. Their concern has given me the strength to overcome all the obstacles and frustration.Last but not the least, the unconditional love from my parents and other family members is always my most substantial backing. I want to appreciate their efforts and trust in me throughout my whole Ph.D. journey.

show abstract

Neuromorphic computing based on Analog ReRAM as low power solution for edge application

Cited by 17 publications

References 3 publications

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

Contact Info

Product

Resources

About