Network analysis of semiconducting Zn 1-x Cd x S based photosensitive device using impedance spectroscopy and current-voltage measurement

Datta, Joydeep; Das, Mukunda P.; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

doi:10.1016/j.apsusc.2017.05.192

Cited by 38 publications

(18 citation statements)

References 35 publications

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“…The equivalent circuit is modelled with two R || C elements (parallel resistor and capacitor) serially connected with one series resistance. Two R || C elements represent the interfacing resistances of ITO/ synthesized compound and synthesized compound/ Al contact . The total impedance can be expressed as,

true Z (ω) = Z^{/} (ω) - j Z^{/ /} (ω)

…”

Section: Resultsmentioning

confidence: 99%

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Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

et al. 2019

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Two isotypical Cd(II) based one‐dimensional coordination polymers (1D CPs) [Cd2(p‐clba)4(bpy)2]⋅(C2H5OH) (1) and [Cd2(p‐brba)4(bpy)2]⋅(C2H5OH), (2) (H2p‐clba=para‐chlorobenzoic acid, H2p‐brba=para‐bromobenzoic acid and bpy=4,4′‐bipyridine) have been synthesized and characterized by X‐ray structure analysis. In the solid‐state strcuture, both the compounds undergo X⋅⋅⋅п (X=Cl or Br) interactions to generate two‐dimensional (2D) supramolecular architectures. Here, due to the larger size and more polarisability of Br atom, Br⋅⋅⋅п interaction is stronger than Cl⋅⋅⋅п, which is accounted for the stronger interchain interactions in 2 as compared to 1. This is depicted in the observed electrical conductivity of the compounds. The compound 2 with stronger interchain interactions shows better charge transport and hence, increasing conductivity. Moreover, band gap of the CPs has been obtained by DFT computation, which also supports the progression of conductivity.

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true Z (ω) = Z^{/} (ω) - j Z^{/ /} (ω)

…”

Section: Resultsmentioning

confidence: 99%

“…Where Z / and Z // are real and imaginary parts of the total impedance ( Z ), and ω is the angular frequency. The above mentioned equivalent circuit can formulate the Z / and Z // in the following manner,

true Z^{/} (ω) = \frac{R_{1}}{1 + {({ω R}_{1} C_{1})}^{2}} + \frac{R_{2}}{1 + {({ω R}_{2} C_{2})}^{2}} + R_{S}

true Z^{/ /} (ω) = \frac{{ω R}_{1}^{2} C_{1}}{1 + {({ω R}_{1} C_{1})}^{2}} + \frac{{ω R}_{2}^{2} C_{2}}{1 + {({ω R}_{2} C_{2})}^{2}}

…”

Section: Resultsmentioning

confidence: 99%

Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

et al. 2019

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“…Thus, the electron‐transfer process is more effective than the hole‐transfer in this interface. This effect can be explained considering that Zn 1‐x Cd x S normally exhibit a n‐type semiconducting behavior ,. So, when the working electrode is forward biased (cathode), the charge carriers are pulled from the bulk to the interface and transferred to the electrolyte (reduction of Fc + ).…”

Section: Resultsmentioning

confidence: 99%

A Synaptic Electrochemical Memristor Based on the Cu²⁺/Zn²⁺Cation Exchange in Zn:CdS Thin Films

2018

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Neuromorphic hardware systems that simulate functions of biological brain synapses have been widely investigated due to their possible application in brain‐inspired computing. We hereby report on a novel electrochemical state machine based on Zn:CdS thin films. The memory switching mechanism involves the cation exchange of Cu2+ and Zn2+ acting as inorganic “neurotransmitters”. Similarly to the synapse‐neurotransmitter interactions, Cu2+ ions increase the conductivity and the electrocatalytic activity of Zn:CdS towards the ferrocene/ferrocenium redox process. The cationic substitution of Zn2+ by Cu2+ in the film has shown significant changes in the electrochemical characteristic of the device. Such effects have been investigated with both alternated current (impedance) and direct current (voltammetry and I vs V) measurements. The cation exchange mechanism allows to write and store an electrochemical information into the device. Such information can be gradually erased by exchanging the absorbed Cu2+ ions with Zn2+. By means of a timed soaking, of the active area, with Cu2+ and Zn2+ diethyldithiocarbamates, the device can be driven through multiple conduction states, making it suitable for applications in artificial synapses research and memory storage systems.

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“…It can be expressed as the summation of average total time spent by each electron as a free carrier plus total time spent in the tarp. 45 The transit time (s) of the charge carrier is estimated with the help of following equation:…”

Section: Electrical Characterizationmentioning

confidence: 99%

Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

et al. 2019

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Network analysis of semiconducting Zn 1-x Cd x S based photosensitive device using impedance spectroscopy and current-voltage measurement

Cited by 38 publications

References 35 publications

Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

A Synaptic Electrochemical Memristor Based on the Cu²⁺/Zn²⁺Cation Exchange in Zn:CdS Thin Films

Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

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Network analysis of semiconducting Zn 1-x Cd x S based photosensitive device using impedance spectroscopy and current-voltage measurement

Cited by 38 publications

References 35 publications

Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

Halogen⋅⋅⋅π Interactions in Supramolecular Architecture of 1D Coordination Polymers and Their Electrical Conductance

A Synaptic Electrochemical Memristor Based on the Cu2+/Zn2+Cation Exchange in Zn:CdS Thin Films

Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

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A Synaptic Electrochemical Memristor Based on the Cu²⁺/Zn²⁺Cation Exchange in Zn:CdS Thin Films