2013
DOI: 10.1021/jp408625s
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Nephelauxetic Effects in the Electronic Spectra of Pr3+

Abstract: The well-known nephelauxetic series of ligands describes the change in interelectronic repulsion of the central metal ion, which is reduced on going from the vapor to crystalline state. This study examines the trends and quantifies the mechanism of this series for the lanthanide ion Pr(3+), with the 4f(2) electronic configuration. A new and concise measurement by a single parameter, σee, is introduced to quantify the overall strength of interelectronic repulsion, as the alternative to the Slater parameters, F(… Show more

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Cited by 43 publications
(26 citation statements)
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“…The nephelauxetic ratio β describes the ratio F 2 (ion in complex)/ F 2 (free ion). The nephelauxetic effect is quite small for f n systems . The spin‐orbit coupling constant ζ undergoes a similar reduction as the SCS parameters in comparison to the free ion values.…”
Section: Angular Overlap Modelmentioning
confidence: 80%
“…The nephelauxetic ratio β describes the ratio F 2 (ion in complex)/ F 2 (free ion). The nephelauxetic effect is quite small for f n systems . The spin‐orbit coupling constant ζ undergoes a similar reduction as the SCS parameters in comparison to the free ion values.…”
Section: Angular Overlap Modelmentioning
confidence: 80%
“…(c) Energy of the 3 P 1 level as a function of the 3 P 0 level in crystals [14]. (d) Energy of the 1 D 2 level as a function of 3 P 1 level in crystals [18]. The energies for all energy levels are shown here with respect to the ground state.…”
Section: Theorymentioning
confidence: 99%
“…The orthonomalized Racah parameters Êi and the normalization constants N i have been defined in eqs 4−8 of ref 8. The average standard deviation of all energy levels σ ee is given by eq 10 of ref 8 and is related to S NES by the following equation…”
Section: Theoretical Sectionmentioning
confidence: 99%
“…8 The definition of σ ee demonstrates that it represents the spread of the energy levels, but at the same time, it depends on the number of energy levels. More precisely speaking, it depends on the atomic structure of the 4f-electron configuration (angular part of the Hamiltonian) in addition to the strength of the electrostatic repulsion (radial part of the Hamiltonian).…”
Section: Introductionmentioning
confidence: 99%