Negative-U Properties for Point Defects in Silicon

Watkins, G. D.; Troxell, John R.

doi:10.1103/physrevlett.44.593

Cited by 333 publications

(127 citation statements)

References 7 publications

Supporting

Mentioning

117

Contrasting

Unclassified

Order By: Relevance

“…Secondly, the peak position of E1 is fixed for all pulse widths, whereas the position of the E2 group of peaks collectively moves to lower emission rates for longer filling pulse widths. This is reminiscent of negative U behaviour where the capture of additional charge leads to a level further away from the conduction band [8]. In Fig.…”

Section: Figurementioning

confidence: 98%

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret

Meyer

Diale

et al. 2011

MSF

View full text Add to dashboard Cite

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

show abstract

Section: Figurementioning

confidence: 98%

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret

Meyer

Diale

et al. 2011

MSF

View full text Add to dashboard Cite

show abstract

“…In a series of theoretical studies [17] and correlated EPR and DLTS experiments of Watkins and co-workers [18], it became possible to solve some problems associated with the electrical level structure of the vacancy. The charge states V 2+ , V + , V 0 form the so-called negative U system, caused when the energy gain of a Jahn-Teller distortion is larger than the repulsive energy of the electrons, case in which the (0/+) level is inverted in respect to (+/++) level, which are the striking consequence of the fact that the V + charge state is metastable.…”

Section: Aspects Associated With Primary Defects In Siliconmentioning

confidence: 99%

The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

Lazanu

2006

Phys. Scr.

View full text Add to dashboard Cite

The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis of the behaviour of silicon detectors after irradiation conduces to a good or reasonable agreement between theoretical calculations and experimental data for the time evolution of the leakage current and effective carrier concentration after lepton and gamma irradiation and large discrepancies after hadron irradiation and this in conditions where a reasonable agreement is obtained between experimental and calculated concentrations of complex defects. In this contribution, we argue that the main discrepancies could be solved naturally considering as primary defects the self-interstitials, classical vacancies and the new predicted fourfold coordinated silicon pseudovacancy defects. This new defect is supposed to be introduced uniformly in the bulk during irradiation, has deep energy level(s) in the gap and it is stable in time. Considering the mechanisms of production of defects and their kinetics, it was possible to determine indirectly the characteristics of the Si FFCD defect: energy level in the band gap and cross section for minority carrier capture. In the frame of the model, the effects of primary defects on the degradation of silicon detectors are important in conditions of continuous long time irradiation and /or high fluences.

show abstract

“…Watkins concluded that the Si-G29 spectrum originated from the neutral charge state of a complex in which the tin atom resides at the midpoint between two unoccupied silicon-atom sites; the defect annealed at a temperature of ϳ500 K. This impurityvacancy configuration is unusual as it has only been observed in the case of tin ͑the positive and negative charge states of the Ge-vacancy pair in Si have configurations similar to the E-center configuration ͑occupied by P-V, As-V, and Sb-V͒ in which both the impurity and the vacancy reside on nearest-neighbor lattice sites 7 ͒. Watkins and Troxell 8 concluded later, based on deep-level transient spectroscopy ͑DLTS͒ measurements of electron irradiated p-type Si doped with Sn, that a ϳ100% conversion of vacancies to these Sn-vacancy pairs takes place upon thermal annealing at ϳ200 K. Thus, all the vacancies produced during a low-temperature electron irradiation are trapped by the Sn atoms after a thermal annealing in p-type samples. In the DLTS investigation, Watkins and Troxell observed two DLTS peaks at E v ϩ0.07 and E v ϩ0.32 eV ͑E v denotes the valence-band edge͒ which they identified as the double-and single-donor states of the Sn-vacancy defect, respectively.…”

Section: Introductionmentioning

confidence: 99%

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

et al. 2000

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Larsen, A. N., Goubet, J. J., Mejlholm, P., Christensen, J. S., Fanciulli, M., Gunnlaugsson, H. P., ... Dannefaer, S. (2000). Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical Review B Condensed Matter, 62(7), 4535-4544. DOI: 10.1103/PhysRevB.62.4535 Tin-vacancy acceptor levels in electron-irradiated n-type silicon 18 Sn/cm 3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy ͑Sn-V͒ levels at E c Ϫ0.214 eV and E c Ϫ0.501 eV have been identified ͑E c denotes the conduction band edge͒. Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

show abstract

Negative-U Properties for Point Defects in Silicon

Cited by 333 publications

References 7 publications

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Contact Info

Product

Resources

About