Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer*

Ge, Mei; Cai, Qing; Zhang, Baohua; Chen, Dunjun; Hu, Liqun; Xue, Junjun; Lu, Hai; Zhang, Rong; Zheng, Yi

doi:10.1088/1674-1056/ab3e00

Cited by 7 publications

(5 citation statements)

References 27 publications

(29 reference statements)

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“…The SELB model is used for simulating the breakdown voltage of the device and the model parameters are the same as the reported by Kunihiro[9]. In this work, physical models are calibrated through the comparative analysis of the transfer characteristic curve of a conventional p-GaN HEMT with previous experimental result [8]. Figure 2 shows that the transfer characteristic from this work is similar to the reported result.…”

Section: Device Structure and Simulation Modelsupporting

confidence: 62%

“…To accurately simulate the recombination and scattering processes of charge carriers, donor and acceptor traps are introduced into the GaN channel. The donor trap energy level is set 3.2 eV above the valence band maximum and the acceptor trap energy level is set 0.4 eV below the conduction band minimum [8]. The HEMT device uses Schottky contact to improve the positive shift of the threshold voltage.…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

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Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Ma,

Liu,

Liu

et al. 2024

International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023)

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This article presents a comprehensive simulation analysis of a normally-off AlGaN/GaN HEMT with recessed p-GaN gate. Based on a conventional p-GaN HEMT, the structure of the device is achieved by selectively etching the AlGaN barrier layer beneath the gate and depositing a p-GaN cap layer. The TCAD tool was used to analyze transfer characteristics, output characteristics, transconductance, and breakdown voltage of the device. Besides, the large-signal power performance was also studied. The results indicate that the normally-off HEMT exhibits great performance with a threshold voltage of 2.7 V, saturation drain current at 1.52 A/mm, peak transconductance reaching 326 mS/mm, and a breakdown voltage of 610 V. When the device is driven with large-signal operation at the gate, the output power and power output efficiency increase with the increasing input power, while the power gain decreases.

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Section: Device Structure and Simulation Modelsupporting

confidence: 62%

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Ma,

Liu,

Liu

et al. 2024

International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023)

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“…The Central Sterile Supply Department (CSSD), a key department for nosocomial infection prevention and control, supplies a variety of sterile instruments, utensils, and articles for the hospital. The quality of CSSD work can directly affect medical treatment quality and patient safety [ 1 , 2 ]. The “Central Sterile Supply Department (CSSD) – Part II: Standard for operating procedure of cleaning, disinfection and sterilization” implemented in China in June 2017 [ 3 ] states that the sealing width of paper-plastic pouches should be ≥6 mm.…”

Section: Introductionmentioning

confidence: 99%

Optimizing Sterilization Packaging through Root Cause Analysis: An Exploration into Sealing Defects of Paper-Plastic Pouches

Jiang

Chen

et al. 2023

Med Sci Monit

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Background Paper-plastic sterilization pouches are essential in healthcare for preventing instrument contamination. However, sealing defects in these pouches can jeopardize patient safety. To address this issue, our study uses Root Cause Analysis (RCA), aiming to identify contributing factors to these defects and propose practical solutions. Through this, we aim to enhance the overall sterilization process Material/Methods A retrospective analysis was conducted on 35,762 instruments sterilized and packaged in paper-plastic pouches at our hospital’s Central Sterile Supply Department (CSSD) across two periods: July 2020 to June 2021 (pre-RCA, 17,563 instruments) and September 2021 to August 2022 (post-RCA, 18,199 instruments). We evaluated RCA scores, packaging personnel’s perceptions of sealing quality, and sealing defect rates before and after RCA implementation. Results Root causes for sealing defects included lack of a standardized inspection procedure, inadequately sized packing table, missed inspections, incorrect distribution procedures, inadequate staff training, and insufficient lighting through the pass-through window between storage and distribution rooms. Among these, lack of a standardized inspection procedure, small packing table size, and missed inspections were statistically significant risk factors ( P <0.05). The sealing defect rate decreased from 0.15% pre-RCA implementation to 0.07% post-RCA implementation. Conclusions Implementing RCA has been shown to effectively enhance the CSSD staff’s perception of sealing quality and significantly reduce the incidence of sealing defects in paper-plastic pouches. Thus, RCA serves as an invaluable tool for quality improvement in sterilization packaging processes.

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“…[6,7] For safe-failed operation and simple drive circuits, designs of normally-off GaN devices are essential, [8,9] and several techniques to realize normally-off GaN devices have been proposed like thin AlGaN barrier, [10] fluorine implantation, [11] trench gate. [12] Recently p-GaN gate technique has become the most prevalent method to achieve normally-off GaN HEMTs, [13][14][15] and based on this technique several high breakdown voltage GaN HEMTs with high breakdown voltage and high switching speed have been released. [16,17] As far as we know for p-GaN gate GaN HEMTs the highest average breakdown electric field and figure of merit (FOM) are 1.4 MV/cm and 3.9 GW/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*

Liu

2020

Chinese Phys. B

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A novel p-GaN gate GaN high-electron-mobility transistor (HEMT) with an AlGaN buffer layer and hybrid dielectric zone (H-HEMT) is proposed. The hybrid dielectric zone is located in the buffer and composed of horizontal arranged HfO2 zone and SiN x zone. The proposed H-HEMT is numerically simulated and optimized by the Silvaco TCAD tools (ATLAS), and the DC, breakdown, C–V and switching properties of the proposed device are characterized. The breakdown voltage of the proposed HEMT is significantly improved with the introduction of the hybrid dielectric zone, which can effectively modulate the electric field distribution in the GaN channel and the buffer. High breakdown voltage of 1490 V, low specific on-state resistance of 0.45 mΩ⋅cm2 and high Baliga’s figure of merit (FOM) of 5.3 GW/cm2, small R on Q oss of 212 mΩ⋅nC, high turn-on speed 627 V/ns and high turn-off speed 87 V/ns are obtained at the same time with the gate-to-drain distance L gd of 6 μm.

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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer*

Cited by 7 publications

References 27 publications

Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Optimizing Sterilization Packaging through Root Cause Analysis: An Exploration into Sealing Defects of Paper-Plastic Pouches

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*

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