2018
DOI: 10.1016/j.nimb.2017.09.018
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Negative thermal quenching of the defects in GaInP top cell with temperature-dependent photoluminescence analysis

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Cited by 10 publications
(6 citation statements)
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“…40) In addition, by temperature-dependent PL measurements of irradiated GaInP/GaAs/Ge triple-junction solar cells, it was reported that the PL NTQ behavior may be attributed to the intermediate states at an energy level of 0.05 eV within the band gap in the GaInP top cell. 41) In this context, the PL emission intensity is thermally stimulated with an activation energy of ΔE 1 . The exciton and/or carrier trap centers exist inside the nanostructures, and they were thermally stimulated and transferred to the PL luminescent states from unknown intermediate states.…”
Section: Resultsmentioning
confidence: 99%
“…40) In addition, by temperature-dependent PL measurements of irradiated GaInP/GaAs/Ge triple-junction solar cells, it was reported that the PL NTQ behavior may be attributed to the intermediate states at an energy level of 0.05 eV within the band gap in the GaInP top cell. 41) In this context, the PL emission intensity is thermally stimulated with an activation energy of ΔE 1 . The exciton and/or carrier trap centers exist inside the nanostructures, and they were thermally stimulated and transferred to the PL luminescent states from unknown intermediate states.…”
Section: Resultsmentioning
confidence: 99%
“…3–6 This same phenomenon has then been found in pure ZnO material, GaInP, and carbon nanodots. 7–11 The reason for the negative thermal quenching is mostly attributed to electrons at defect energy states, which couple with phonons and can be easily activated by thermal energy. 3–11…”
Section: Introductionmentioning
confidence: 99%
“…7–11 The reason for the negative thermal quenching is mostly attributed to electrons at defect energy states, which couple with phonons and can be easily activated by thermal energy. 3–11…”
Section: Introductionmentioning
confidence: 99%
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