Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO

Hoogeboom, Geert R.; Aqeel, Aisha; Kuschel, Timo; Palstra, Thomas; Wees, B. J. van

doi:10.1063/1.4997588

Cited by 167 publications

(197 citation statements)

References 62 publications

(101 reference statements)

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“…It crystallizes in a rock salt structure with a lattice constant of 4.1769 Å [20] at 300 K. It was recently shown that NiO can act as a spin current amplifier in spin Seebeck experiments, and can additionally be a spin current generator when a thermal gradient is applied [21,22,23,24], making NiO a key material for thermoelectric devices. Further, the latest studies report on a temperature-dependent sign change in the spin hall magnetoresistance for nickel oxide on ferromagnetic insulator [25,26]. Thus, there is a possibility to use it as a spin filter.…”

Section: Introductionmentioning

confidence: 99%

Impact of Strain and Morphology on Magnetic Properties of Fe3O4/NiO Bilayers Grown on Nb:SrTiO3(001) and MgO(001)

et al. 2018

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We present a comparative study of the morphology and structural as well as magnetic properties of crystalline Fe3O4/NiO bilayers grown on both MgO(001) and SrTiO3(001) substrates by reactive molecular beam epitaxy. These structures were investigated by means of X-ray photoelectron spectroscopy, low-energy electron diffraction, X-ray reflectivity and diffraction, as well as vibrating sample magnetometry. While the lattice mismatch of NiO grown on MgO(001) was only 0.8%, it was exposed to a lateral lattice mismatch of −6.9% if grown on SrTiO3. In the case of Fe3O4, the misfit strain on MgO(001) and SrTiO3(001) amounted to 0.3% and −7.5%, respectively. To clarify the relaxation process of the bilayer system, the film thicknesses of the magnetite and nickel oxide films were varied between 5 and 20 nm. While NiO films were well ordered on both substrates, Fe3O4 films grown on NiO/SrTiO3 exhibited a higher surface roughness as well as lower structural ordering compared to films grown on NiO/MgO. Further, NiO films grew pseudomorphic in the investigated thickness range on MgO substrates without any indication of relaxation, whereas on SrTiO3 the NiO films showed strong strain relaxation. Fe3O4 films also exhibited strong relaxation, even for films of 5 nm thickness on both NiO/MgO and NiO/SrTiO3. The magnetite layers on both substrates showed a fourfold magnetic in-plane anisotropy with magnetic easy axes pointing in 100 directions. The coercive field was strongly enhanced for magnetite grown on NiO/SrTiO3 due to the higher density of structural defects, compared to magnetite grown on NiO/MgO.

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Section: Introductionmentioning

confidence: 99%

Impact of Strain and Morphology on Magnetic Properties of Fe3O4/NiO Bilayers Grown on Nb:SrTiO3(001) and MgO(001)

et al. 2018

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“…The current is applied along the x direction (φ = 0°). 20 The red squares and blue triangles are experimental values. The green solid line is the simulated magnetoelastic anisotropy energy.…”

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confidence: 99%

Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film

Zhang¹,

Finley²,

Safi³

et al. 2019

Phys. Rev. Lett.

104

102

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Electrical control and detection of magnetic ordering inside antiferromagnets has attracted considerable interests, for the potential advantages in operating speed and device densities.In contrast to ferromagnets, where the current-induced torque on magnetic moments can be analyzed via comparison with magnetic field's influence, the quantitative investigation on the spin torque mechanism in antiferromagnets represents a greater challenge, due to the lack of a convenient, independent method for controlling Né el vectors. Here by utilizing an antiferromagnetic insulator with Dzyaloshinskii-Moriya interaction, α-Fe2O3, we show that the Né el vector can be easily controlled with the application of a moderate external magnetic field, which can be further used to examine the current-induced magnetic dynamics. We find that in this antiferromagnetic insulator, current-induced magnetoresistance change can be complicated by resistive switching that does not have a magnetic origin. By excluding nonmagnetic switching and comparing the current-induced and field-induced Né el vector tilting, we reveal the important role of magnetoelastic effect in current-induced dynamics of this antiferromagnet. The nature and magnitude of magnetoelastic effect is further determined and compared with possible spin orbit torque influences.

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“…However, the effective manipulation of the antiferromagnetic moment is challenging due to the insensitivity of AFMs to external magnetic fields, which is also the crucial issue in AFM‐based spintronics. Many efforts have been made to solve this problem via magnetic control by a strong magnetic field or field cooling,2,10,11 electrical control by a current or an electric field,3,12–16 and optical control based on a thermal or an electronic excitation 17–19…”

Section: Introductionmentioning

confidence: 99%

Giant Strain Control of Antiferromagnetic Moment in Metallic FeMn by Tuning Exchange Spring Structure

Feng

Wang

et al. 2020

Adv Funct Materials

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Manipulation of the antiferromagnetic moment in antiferromagnets (AFMs) is a crucial issue for developing AFM‐based spintronic devices. Lattice strain is an effective strategy to modulate the antiferromagnetic moment and is traditionally based on a direct crystalline tailoring of AFMs. A novel method for strain tuning the antiferromagnetic moment by controlling the exchange spring in the AFM, which is applicable to other conventional AFM materials, is reported. Specifically, a TiNi(Nb) shape memory alloy (SMA) is used as the substrate of Ta/NiFe/FeMn multilayers. By thermally driven inverse martensitic phase transformation in the SMA, a significant strain of 1.3% is transferred into the film, which toggles a noticeable magnetic moment rotation of NiFe by nearly 90° in the film plane, resulting in a consequent twirling of the Néel vector of FeMn due to interfacial exchange interaction. In turn, the antiferromagnetic moment of FeMn is tailorable by tuning the exchange spring. Simultaneously, the exchange bias field is tuned significantly with a maximal variation of 350% due to the twist of the antiferromagnetic moment, which facilitates strain‐assisted magnetization reversal for developing a logic memory device. These findings provide an alternative strategy to advance the development of an AFM‐based memorizer by temperature‐driven strain engineering.

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Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO

Cited by 167 publications

References 62 publications

Impact of Strain and Morphology on Magnetic Properties of Fe3O4/NiO Bilayers Grown on Nb:SrTiO3(001) and MgO(001)

Impact of Strain and Morphology on Magnetic Properties of Fe3O4/NiO Bilayers Grown on Nb:SrTiO3(001) and MgO(001)

Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film

Giant Strain Control of Antiferromagnetic Moment in Metallic FeMn by Tuning Exchange Spring Structure

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