Negative poisson’s ratio in single-layer black phosphorus

Jiang, Jin-Wu; Park, Harold S.

doi:10.1038/ncomms5727

Cited by 677 publications

(611 citation statements)

References 43 publications

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“…BP has the ability to withstand a tensile strain of up to 30% and 32% for monolayer and multi‐layer BP, respectively; the superior flexibility of phosphorene can also be utilized for practical large‐magnitude strain engineering 46, 72. The presence of a negative Poisson's ratio (ν = –0.027) in the out‐of‐plane direction under a uniaxial deformation in the direction parallel to the pucker in single‐layer BP was confirmed from first‐principles calculations 49. Due to the Hall mobility in the BP two‐dimensional electron gas, quantum oscillations at the extreme quantum limit are observed 73.…”

Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 84%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

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Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 84%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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“…Various properties of phosphorene have been investigated theoretically and experimentally, e.g., field transistor effect [1,3,4,20], strain modification [7,13,19,21], optoelectronics and electronics [22][23][24][25][26][27][28][29][30][31], transport properties [2,32,33], excitons [18,34], heterostructures and PN junctions [35][36][37], and a recent experimental demonstration of the crystalline * kchang@semi.ac.cn; † wuzhenhua@ime.ac.cn anisotropy impacted phase coherent transport properties in BP field-effect transistor [38]. Another experiment carried out by Masih Das, et al [39] indicates that its possible to sculpture phosphorus nanoribbons experimentally which provide a possibility to make a PNR as proposed in this paper.…”

Section: Introductionmentioning

confidence: 99%

Aharonov-Bohm effect in monolayer phosphorene nanorings

Zhang

et al. 2017

Phys. Rev. B

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This work presents theoretical demonstration of Aharonov-Bohm (AB) effect in monolayer phosphorene nanorings (PNR). Atomistic quantum transport simulations of PNR are employed to investigate the impact of multiple modulation sources on the sample conductance. In presence of a perpendicular magnetic field, we find that the conductance of both armchair and zigzag PNR oscillate periodically in a low-energy window as a manifestation of the AB effect. Our numerical results have revealed a giant magnetoresistance (MR) in zigzag PNR (with a maximum magnitude approaching two thousand percent). It is attributed to the AB effect induced destructive interference phase in a wide energy range below the bottom of the second subband. We also demonstrate that PNR conductance is highly anisotropic, offering an additional way to modulate MR. The giant MR in PNR is maintained at room temperature in the presence of thermal broadening effect.

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“…The negative Poisson ratio should also exist in other buckled borophenes with low HH concentrations. Earlier theories have reported negative Poisson ratio in phosphorene 43 and a newly predicted Be 5 C 2 monolayer [43][44] , both with a large out-of-plane buckling.…”

mentioning

confidence: 99%

Elasticity, Flexibility, and Ideal Strength of Borophenes

Zhang

Yang

Penev

et al. 2017

Adv Funct Materials

262

199

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ABSTRACT:We study the mechanical properties of two-dimensional (2D) boron-borophenes -by first-principles calculations. The recently synthesized borophene with 1/6 concentration of hollow hexagons (HH) is shown to have in-plane modulus C up to 210 N/m and bending stiffness as low as D = 0.39 eV. Thus, its Foppl-von Karman number per unit area, defined as C/D, reaches 568 nm -2 , over twofold higher than graphene's value, establishing the borophene as one of the most flexible materials. Yet, the borophene has a specific modulus of 346 m 2 /s 2 and ideal strengths of 16 N/m, rivaling those (453 m 2 /s 2 and 34 N/m) of graphene. In particular, its structural fluxionality enabled by delocalized multi-center chemical bonding favors structural phase transitions under tension, which result in exceptionally small breaking strains yet highly ductile breaking behavior. These mechanical properties can be further tailored by varying the HH concentration, and the boron sheet without HHs can even be stiffer than graphene against tension. The record high flexibility combined with excellent elasticity in boron sheets can be utilized for designing composites and flexible systems.

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Negative poisson’s ratio in single-layer black phosphorus

Cited by 677 publications

References 43 publications

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Aharonov-Bohm effect in monolayer phosphorene nanorings

Elasticity, Flexibility, and Ideal Strength of Borophenes

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