Negative persistent photoconductivity in GaAs (δ-Sn) structures

Kulbachinskii, V.A.; Кытин, В. Г.; Lunin, R. A.; Голиков, А.В.; Demin, A. V.; Бугаев, А. С.; Senichkin, A.P.; Visser, A. de; Schaijk, R.T.F. van

doi:10.1134/1.559065

Cited by 4 publications

(6 citation statements)

References 24 publications

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“…However, InAs has a surface accumulation layer which can have major impacts on their charge carrier transport properties. The NPC phenomenon was observed in the InAs system with different types of alloys and structures. − ,, Yang et al observed the negative photoconductance in n-type indium arsenide nanowires . The photoconductance under different wavelength illumination and the proposed mechanism are presented in Figure a–d.…”

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confidence: 94%

“…The NPC phenomenon was observed in the InAs system with different types of alloys and structures. [75][76][77]81,82 Yang et al observed the negative photoconductance in n-type indium arsenide nanowires. 22 The photoconductance under different wavelength illumination and the proposed mechanism are presented in Figure 4a−d.…”

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confidence: 99%

“…Shen et al observed the enhanced NPC in the modified surface of InAs NWs with ArS − -based molecular monolayer (with a stronger electron-withdrawing group). 81 In these surface-modified InAs NWs, the trapping of hot electrons increases, which leads to an Under illumination, the photogenerated electrons are trapped in the surface trapping centers of the native oxide layer (composed of AsO x and In 2 O 3 ), leaving the unpaired holes to recombine with the free electrons. Simultaneously, the trapped electrons can generate a built-in potential (reverse of the applied electric field) to reduce the density of the free electrons through capacitive coupling.…”

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confidence: 99%

“…Furthermore, by enhancing the hot electron trapping capability, the magnitude of NPC can be enhanced. Shen et al observed the enhanced NPC in the modified surface of InAs NWs with ArS – -based molecular monolayer (with a stronger electron-withdrawing group) . In these surface-modified InAs NWs, the trapping of hot electrons increases, which leads to an increase in the NPC magnitude.…”

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confidence: 99%

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Negative Photoconductivity: Bizarre Physics in Semiconductors

Tailor

Aranda

Saliba

et al. 2022

ACS Materials Lett.

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Many gadgets in our daily life work on the photodetection principle. These photodetectors (such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs)) work on the principle of positive photoconductivity (PPC), where conductivity increases with light illumination. However, an opposite phenomenon, where the conductivity decreases with light exposure, also known as negative photoconductivity (NPC), has been reported in various inorganic (doped-Si, PbTe, 2D materials), organic (graphene, carbon nanotubes), and organic–inorganic hybrid (halide perovskites) materials. The origin of NPC phenomena in a semiconductor is still debated though its application potential has recently reached far beyond photodetection. Here, we have critically analyzed the fundamental photophysics of NPC phenomena in semiconductors, discussed its mechanistic origin in detail, and demonstrated how it depends on various external factors, such as temperature, illumination intensity, humidity, doping concentration, etc. We also highlight the recent progress of NPC in ultrasensitive detection applications. Finally, we discussed the existing challenges and provided a roadmap about how NPC can be helpful in next-generation semiconductor optoelectronics.

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confidence: 94%

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confidence: 99%

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confidence: 99%

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Negative Photoconductivity: Bizarre Physics in Semiconductors

Tailor

Aranda

Saliba

et al. 2022

ACS Materials Lett.

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“…Those works demonstrated that the Sn-dopants are predominantly accumulated at the step edges of the atomic terraces of the vicinal GaAs substrate enabling the formation of a dense array of the one-dimensional (1D) Sn-nanothreads (Sn-NTs) channels. The resistance anisotropy of R /R ⊥ ∼ 0.7 was observed in [28]. Later we showed that the GaAs-HEMTs fabricated on the vicinal GaAs substrate with a pseudomorphic strained quantum well InGaAs with Sn-doping profile corresponding to the Sn-NTs exhibit the anisotropy of the saturation currents flowing in parallel and perpendicular directions with respect to the Sn-NTs, i.e.…”

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confidence: 75%

Sub-terahertz FET detector with self-assembled Sn-nanothreads

Пономарев

Lavrukhin

Yachmenev

et al. 2019

J. Phys. D: Appl. Phys.

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We report on the design, evaluation and fabrication of the sub-terahertz (sub-THz) detector using a GaAs gated field-effect transistor with a buried quasi-two-dimensional electron gas created by the self-assembled Sn-nanothreads (Sn-NTs) embedded into the GaAs channel. This GaAs-Sn-NTs detector efficiently detects a sub-THz radiation at cryogenic and room temperatures (CT and RT, respectively). Two possible detection mechanisms are the bolometric mechanism due to electron heating by the sub-THz radiation and the mechanism related to the rectification of the decayed plasmonic oscillations. We developed a classical self-consistent device model of the bolometric detection involving the Poisson equation and the electron density of states and estimated responsivity and noise-equivalent power of the detector. The measured I-V characteristics and the photoresponse to the incident sub-THz radiation at CT and RT are in reasonable agreement with our model. The detector demonstrates a better performance than semiconductor-based hot-electron bolometers and quantum-well/dot IR and THz photodetectors.

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