Negative luminescence of InAs/GaSb superlattice photodiodes

Abstract

The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 µm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

“…These techniques include negative lumines− cence [7] electro luminescence [8] and transmission elec− tron microscopy (TEM). Fig.…”