Negative Ion Kinetics in RF Glow Discharges

Gottscho, Richard A.; Gaebe, Carl E.

doi:10.1109/tps.1986.4316511

Cited by 239 publications

(107 citation statements)

References 39 publications

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“…The work of Boeuf (1987) is noteworthy because of the inclusion of negative ions and comparison to experimental measurements of Gottscho and Gaebe (1986) in which the existence of transient double layers was observed in 50 kHz discharges in BCl,. The origin of double layers in Boeuf's simulation was reported to be a large modulation in the positive and negative ion density profiles at low to moderate frequency near the plasmasheath boundary.…”

Section: January 1989mentioning

confidence: 99%

“…A particularly noteworthy application of LIF is the work of Gottscho and coworkers in developing the technique of Starkmixed LIF for determination of electric field strengths (Moore et al, 1984;Mandich et al, 1985;Gottscho and Gaebe, 1986).…”

Section: Laser-induced Fluorescencementioning

confidence: 99%

“…The minimum field measurable by Gottscho and Gaebe (1986) using BCl as the probe molecule and a pulsed dye laser (pumped by a nitrogen laser) was about 75 V/cm, which restricts measurement to the high-field sheath regions. However, using NaK as the probe molecule and a cw (continuous wave) ring dye laser, Derouard and Sadeghi (1986) have been able to measure much smaller fields (<20 V/cm).…”

Section: Laser-induced Fluorescencementioning

confidence: 99%

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Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

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Plasma processing has emerged as an important technology for the deposition and etching of thin solid films in the manufacture of microelectronic devices. In fact, much of the progress achieved to date in device miniaturization would have been much more difficult without the unique characteristics of plasma processes. It is anticipated that future progress will continue to rely heavily on plasma technology. Although plasma chemical reactors are widely used, a lack of fundamental understanding has resulted in heavy reliance on empiricism in process design and control. The complexities inherent in any chemical reactor are compounded in plasma processing by the presence and active participation of the discharge in both gas phase and surface chemical processes. This has resulted in a technology that is sensitive to many design and operating parameters. A large parameter space gives process engineers flexibility in tailoring process conditions to meet objectives. However, without fundamental insight into the key physical and chemical processes, reactor design and control cannot be based on systematic, rational procedures. The purposes of this review are to introduce chemical engineers to plasma processing practice and phenomenology; to outline the progress made to date in fundamental studies of discharge physics and chemistry; to indicate areas in which chemical engineers must expand their traditional training to participate in plasma processing research; and finally to suggest how established chemical engineering methodology can be applied to plasma chemical reactors. David B. Graves Department of Chemical EngineeringUniversity of California Berkeley, CA 94720Introduction to Plasma Processing History, motivation, and future prospects Molecular gas plasmas are currently widely used in the microelectronics industry for the deposition and etching of thin solid films. Plasma processing is one of many techniques and processes used in the manufacture of integrated circuits (Doane et al., 1982), but the importance of plasma processing to present and future developments in microelectronics, coupled with the growing interest in this technology by chemical engineers, justifies a closer look at industrial practice and the underlying science. Simply stated, microelectronics manufacturing amounts to the growth, patterning, and doping of multiple layers of insulating, semiconducting, and conducting thin films (Hess, 1979). Consequently, deposition and selective etching of films is fundamental to many of the steps involved in this industry. It happens that chemically reacting, weakly ionized gas discharges are particularly powerful tools for depositing and removing thin films.Plasma etching is the more important process industrially, with VLSI (very large scale integration) relying upon the superior pattern transfer fidelity possible with plasma etching (a more or less equivalent term is reactive-ion etching). The utility of plasmas for etching hinges on their ability, under certain conditions, to remove material in the direction p...

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Section: January 1989mentioning

confidence: 99%

Section: Laser-induced Fluorescencementioning

confidence: 99%

Section: Laser-induced Fluorescencementioning

confidence: 99%

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Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

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“…Negative ion plasma can be defined as plasma that includes both negative and positive ion species, as well as electrons. This type of plasma can be created in the plasma M. Mehdipoor (B) Faculty of Science, Gonbad Kavous University, Gonbad Kavous, Iran e-mail: mehdipoor44@yahoo.ca M. Mehdipoor e-mail: mostafa.mehdipoor@ghec.ac.ir processing reactors (Gottscho and Gaebe 1986) and low temperature laboratory experiments (Jacquinot et al 1977;Nakamura et al 1977;Weingarten et al 2001;Ichiki et al 2002). Also, negative ion plasmas are found in many space observations such as the D-and F-regions of the Earth's ionosphere (Portnyagin et al 1991).…”

Section: Introductionmentioning

confidence: 99%

K-dV and mK-dV equations for solitary waves in negative ion plasmas with non-Maxwellian electrons

Mehdipoor

2013

Astrophys Space Sci

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Ion-acoustic (IA) solitons in a collisionless plasma consisting of positive and negative ions and superthermal electrons are studied by using the reductive perturbation method. The basic set of fluid equations is reduced to Korteweg-de Vries (K-dV) and modified Korteweg-de Vries (mK-dV) equations. It is found that both compressive and rarefactive solitons can be propagated in this system. Also it is shown that at critical concentration of positive ions mKdV solitons coexist. The effects of spectral index kappa, positive to negative ion density ratio and mass ratio of positive to negative ions on IA solitons structure are also discussed.

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“…[13][14][15][16][17] In the last few years, plasma containing significant concentration of negative ions with electrons and positive ions has gained interest and several authors have investigated the propagation of ionacoustic wave in such a multi-ion plasma. [18][19][20][21] The plasma containing negative ions exists in the D-region of the ionosphere, 22,23 in plasma processing reactors, 24 and in neutral ion beam sources. 25 Merlino and Loomis 26 used ðAr þ ; SF À 6 Þ plasma for the experimental investigations of strong double layers in the laboratory experiments.…”

Section: Introductionmentioning

confidence: 99%

Landau damping of ion acoustic wave in Lorentzian multi-ion plasmas

2011

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The Landau damping rates of ion acoustic wave are studied by using Vlasov-Poisson model for unmagnetized Lorentzian or kappa distributed plasma containing electrons, positively and negatively charged ions. It is found that the damping rate of ion acoustic wave is increased with the decrease of kappa (i.e., the spectral index of Lorentzian distribution) value. The damping rates of the electrostatic wave in multi-ion component plasmas are discussed in detail which depends on electron to ion temperature ratio and ions masses and density ratios. The numerical results are also shown by choosing some typical experimental parameters of multi-ion plasmas.

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Negative Ion Kinetics in RF Glow Discharges

Cited by 239 publications

References 39 publications

Plasma processing in microelectronics manufacturing

Plasma processing in microelectronics manufacturing

K-dV and mK-dV equations for solitary waves in negative ion plasmas with non-Maxwellian electrons

Landau damping of ion acoustic wave in Lorentzian multi-ion plasmas

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