Negative ion formation through dissociative electron attachment to the group IV tetrachlorides: Carbon tetrachloride, silicon tetrachloride and germanium tetrachloride

Abstract

 Dissociative electron attachment to the group IV tetrachlorides; XY4 (X = C, Si, Ge).  Literature review of electron scattering from the group IV tetrachlorides; XY4 (X = C, Si, Ge).  Last of three papers on dissociative electron attachment to the group IV tetrahalides; XY4 (X = C, Si, Ge and Y = F, Cl, Br).

Dissociative electron attachment to carbon tetrachloride probed by velocity map imaging

“…The 0.94 eV resonant state which is formed in this energy region has a 2 T 2 symmetry. 6,7,14,29,35,39 In spite of the very different initial state, the resulting KEDs are very much similar than those originating from the 2 A 1 near-zero electron attachment: they peak at very low Cl − energies and show basically no change upon increase of the incident electron energy.…”

“…CCl 4 belongs to one of the most frequently studied molecules with respect to electron collisions and electron attachment reactions in particular. 3–14 The motivation for this interest arises both due to applications in plasma processing and due to fundamental aspects of electron attachment to this gas. The fundamental interest concerns primarily the low-energy behaviour: the production of Cl − from CCl 4 is exothermic and reaches a very high cross-section approaching the de Broglie limit.…”

“…15 An in-depth overview of beam and swarm electron-collision data with CCl 4 has been recently provided by Ragesh Kumar et al ; only the results directly relevant to the present work will be listed here. 14 The first detection of Cl − upon electron collisions with CCl 4 was by Baker and Tate. 16…”

Electronic structure and VUV photoabsorption measurements of thiophene

“…This interest has attracted recent attention, as electron scattering phenomena play important roles in efficiently breaking chemical bonds (through dissociative electron attachment) and driving reactions in plasma-like environments. 20,21 This is of particular relevance to materials science where non-thermal plasmas are gaining increasing use for functionalizing surfaces and synthesizing novel nanomaterials. 22,23 To this end, total electron scattering cross sections for thiophene have recently been reported.…”

Multi-Basis-Set (TD-)DFT Methods for Predicting Electron Attachment Energies

“…EOM-CCSD/MBS means VEA calculated at CCSD­(T)/aug-cc-pvtz level and anionic excitation at EOM-CCSD/cc-pvtz level. EOM-CCSD/cc-pvtz means VEA calculated at CCSD­(T)/cc-pvtz level and anionic excitation at EOM-CCSD/cc-pvtz level. b Reference . c Reference . d Reference . e Reference . f Reference . g References and . h Reference . i Reference . j Reference . k Reference . l Reference . m References and . n Reference . o Reference . p Reference . q Reference . …”