Negative Ion Extraction from Pulsed Discharges

Overzet, Lawrence; Smith, Brian A.; Kleber, Jennifer; Kanakasabapathy, Sivananda

doi:10.1143/jjap.36.2443

Cited by 28 publications

(23 citation statements)

References 31 publications

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“…The Cl + signal decays in the afterglow due to charge exchange with Cl 2 to form Cl + 2 . The nuances of negative-ion extraction from a pulsed plasma were reported by Overzet et al [91]. The authors discussed conditions under which negative ions can be extracted from a plasma, and the dependence of negative-ion flux on pulse modulation frequency.…”

Section: Extraction Of Negative Ionsmentioning

confidence: 87%

Pulsed plasma etching for semiconductor manufacturing

Economou

2014

J. Phys. D: Appl. Phys.

166

123

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Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

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Section: Extraction Of Negative Ionsmentioning

confidence: 87%

Pulsed plasma etching for semiconductor manufacturing

Economou

2014

J. Phys. D: Appl. Phys.

166

123

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“…Ion-ion plasmas may be formed in the afterglow of pulsed discharges in electronegative gases [27,28]. They may also form downstream of continuous wave discharges in strongly electronegative gases (spatial afterglow).…”

Section: Formation Of Ion-ion Plasmasmentioning

confidence: 99%

Fundamentals and applications of ion–ion plasmas

Economou

2007

Applied Surface Science

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“…The pressure of plasma chamber was 2.5 mTorr, while the pressure of etching chamber was 0.25 mTorr. [24][25][26] In our experiments, the rf power of the ICP was 800 W with the pulse ON/OFF time of 50/ 50 s, while the low frequency rf bias supplied on the bottom electrode was 100-200 W, 600 kHz. In halogen pulsed plasmas, the negative ions are generated during the pulse OFF time by dissociative attachment of low-energy electrons.…”

Section: A Experimental Condition For Porous Msq Etchingsmentioning

confidence: 99%

Highly selective low-damage processes using advanced neutral beams for porous low-k films

Ohtake¹,

Inoue²,

Ozaki³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Etch induced sidewall damage evaluation in porous low-k methyl silsesquioxane films J. Vac. Sci. Technol. A 25, 986 (2007); 10.1116/1.2717192 In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO 2 A highly selective and low-damage damascene process for porous methyl-silsesquioxane ͑porous MSQ, k-2.2͒ films has been realized using a neutral beam system we have developed. Use of a SF 6 or CF 4 neutral beam enables etching of porous MSQ with higher selectivity to the photoresist than what can be obtained in a conventional plasma. This is considered to be because the neutral beam eliminates exposure to ultraviolet ͑UV͒ light which enhances the resist etching. Anisotropic, low-dimension-shift damascene etching of porous MSQ is achieved through the neutral beam system. In addition, an O 2 neutral beam reduces damage to the sidewall of porous MSQ during the resist ashing process. Also, a modified layer generated on porous MSQ during ashing using a H 2 or H 2 /N 2 beam could prevent damage by UV light, which allows more effective resist ashing in a dual damascene structure of porous MSQ. Accordingly, this neutral beam system is a promising candidate for use in porous MSQ damascene processes.

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Negative Ion Extraction from Pulsed Discharges

Cited by 28 publications

References 31 publications

Pulsed plasma etching for semiconductor manufacturing

Pulsed plasma etching for semiconductor manufacturing

Fundamentals and applications of ion–ion plasmas

Highly selective low-damage processes using advanced neutral beams for porous low-k films

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