Negative-<i>U</i>centers in 4<i>H</i>silicon carbide

Hemmingsson, Carl; Són, Nguyên Tiên; Ellison, A.; Zhang, J.; Janzén, Erik

doi:10.1103/physrevb.58.r10119

Cited by 159 publications

(189 citation statements)

References 9 publications

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“…For the shallower tungsten peak, labeled W1, the capture cross section was determined using different filling pulse lengths 21 The meas of the W2 and EH6/7 did not change in a temperature window of 30 K, whereas the capture cross section of the Z 1/2 -level showed a clear temperature dependence. 22 The DLTS spectrum of 6H-SiC intentionally doped with W is also shown in Fig. 1, ͑stars͒.…”

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confidence: 99%

Deep levels in tungsten doped n-type 3C–SiC

Beyer

Hemmingsson

Gällström

et al. 2011

Applied Physics Letters

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Tungsten was incorporated in SiC and W related defects were investigated using deep level transient spectroscopy. In agreement with literature, two levels related to W were detected in 4H–SiC, whereas only the deeper level was observed in 6H–SiC. The predicted energy level for W in 3C–SiC was observed (EC−0.47 eV). Tungsten serves as a common reference level in SiC. The detected intrinsic levels align as well: E1 (EC−0.57 eV) in 3C–SiC is proposed to have the same origin, likely VC, as EH6/7 in 4H–SiC and E7 in 6H–SiC, respectively.

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confidence: 99%

Deep levels in tungsten doped n-type 3C–SiC

Beyer

Hemmingsson

Gällström

et al. 2011

Applied Physics Letters

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“…Equations (5) and (6) suggest that the occupancy ratio of traps in darkness can be described by the Fermi-Dirac distribution function. As parameters, E C À E TðÀ=0Þ and E C À E Tð2À=0Þ of 0.52 and 0.72 eV for h-site, 0.45 and 0.76 eV for k-site, 19 N d of 1.8 Â 10 16 cm À3 , and ½V C V of 3 Â 10 16 cm À3 were assumed, where ½V C V does not influence on the calculated results very much if the value sufficiently exceeds the half of Fig. 9 as a dashed line (½V À C ðhÞ A ) and a solid line (½V À C ðkÞ A ).…”

Section: Discussionmentioning

confidence: 99%

“…In fact, the Z 1=2 center has a large capture cross section for Z À=0 1=2 (over 1 Â 10 À14 cm 2 compared to À20 Â 10 À19 cm 2 for Z 2À=0 1=2 at 100 K) with an energy barrier for the transition "Z À 1=2 to Z 2À 1=2 " of 0.065-0.080 eV. 19,20 (ii) The electron excitation probability by photons a (Eq.…”

Section: Discussionmentioning

confidence: 99%

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Kawahara

Trinh

Són

et al. 2014

Journal of Applied Physics

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In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C

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“…As Z 1/2 is composed of two very closely spaced overlapping peaks and has a negative-U nature, the rate-determining energy levels and capture cross sections from literature were used. 3,18 The user defined parameters were the RB1 energy level (E a ) and the electron and hole capture cross sections (σ n and σ p , respectively) as well as the Z 1/2 and RB1 deep level concentrations. For all parameters we used the values measured by DLTS, except for σ p , which could not be quantitatively measured and was the only fit parameter in the simulation.…”

Section: Methodsmentioning

confidence: 99%

Carrier Lifetime Controlling Defects Z_1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Booker

Ul-Hassan

Lilja

et al. 2014

Crystal Growth & Design

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4H-SiC epilayers grown by standard and chloride based chemistry were analyzed for their minority carrier lifetime and deep level recombination centers using time resolved photoluminescence (TRPL) and standard and p + /n-junction deep level transient spectroscopy (DLTS). Next to the wellknown Z 1/2 deep level a second effective lifetime killer, RB1 is detected in chloride chemistry grown epilayers. The measured RB1 concentration appears to be a function of the iron-related Fe1 level concentration, which is introduced via the corrosion of reactor steel parts by the chlorinated chemistry. Reactor design and the temperature profile in the growth zone appear to enable the formation of RB1 in the presence of iron contamination under conditions otherwise optimal for growth of material with very low Z 1/2 concentrations. Control of these corrosion issues allows the growth of material at a significantly higher growth rate than possible using standard chemistry and with high minority carrier lifetime based on Z 1/2 as the only bulk recombination center. or a complex involving iron. Control of these corrosion issues allows the growth of material at a high growth rate and with high minority carrier lifetime based on Z 1/2 as the only bulk recombination center.

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Negative-Ucenters in 4Hsilicon carbide

Cited by 159 publications

References 9 publications

Deep levels in tungsten doped n-type 3C–SiC

Deep levels in tungsten doped n-type 3C–SiC

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Carrier Lifetime Controlling Defects Z_1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

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Negative-Ucenters in 4Hsilicon carbide

Cited by 159 publications

References 9 publications

Deep levels in tungsten doped n-type 3C–SiC

Deep levels in tungsten doped n-type 3C–SiC

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

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Carrier Lifetime Controlling Defects Z_1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC