1988., IEEE International Symposium on Circuits and Systems
DOI: 10.1109/iscas.1988.15033
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Negative differential resistance in two-transistor one-ports with no internal sources

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Cited by 2 publications
(3 citation statements)
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“…Such a device can be a building element of SRAM. Trajković and Willson [20] considered two-terminal circuits with N-type current-voltage characteristics using a special connection of two BJTs and three resistors. Jung et al [21] reported fabricating an N-type double-NDR device using a 3D hybrid structure that includes two 2D vdW/organic heterojunctions and one organic resistor.…”
Section: Reviewmentioning
confidence: 99%
See 1 more Smart Citation
“…Such a device can be a building element of SRAM. Trajković and Willson [20] considered two-terminal circuits with N-type current-voltage characteristics using a special connection of two BJTs and three resistors. Jung et al [21] reported fabricating an N-type double-NDR device using a 3D hybrid structure that includes two 2D vdW/organic heterojunctions and one organic resistor.…”
Section: Reviewmentioning
confidence: 99%
“…Most NDR devices and circuits use one, two, or even three power supplies. Such devices have two [14][15][16][17][18][19][20]34,35,38,39], three [18,29,[31][32][33], or four [27] terminals.…”
mentioning
confidence: 99%
“…According to [23], the nonlinear port exhibits an N-type negative differential resistance (NDR), like the one shown in Fig. 6.…”
Section: Theorem 34 Consider Network (210) Under Assumption 31 Thmentioning
confidence: 99%