Negative Differential Resistance in the Au-Coated CH3NH3PbBr3 Perovskite Photodetectors with Fast Response

Jia, Xiaohao; Yue, Shizhong; Ma, Fangyuan; Huang, Zhangyi; Li, Chao; Chu, Kaiwen; Sun, Jiaqian; Dong, Keqian; Wang, Zhijie; Liu, Kong; Xing, Jie; Qu, Shengchun

doi:10.1021/acs.jpcc.2c03364

Cited by 2 publications

(3 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further tests revealed that this change in the shape of the light pulse curve is a complex behavior that depends simultaneously on ion migration, light intensity, and applied voltage. [ 47,48 ] Figure 4e demonstrates the good switching characteristics of the photodetector for different light‐intensity irradiation. Figure 4f shows the effective modulation of the photoswitching characteristics with different bias voltages, which still exhibits a certain degree of photoswitching response even at 0 V. In addition, the device shows good stability under long‐term light pulse operation, as shown in Figure S5 (Supporting Information).…”

Section: Resultsmentioning

confidence: 98%

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Huang,

Ding,

Liu

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

Organic–inorganic hybrid perovskite has attracted extensive research due to its excellent optoelectronic properties and is a competitive candidate material for a new generation of photodetectors. However, lateral structure photodetectors based only on perovskite active materials still present moderate performance and poor stability. Herein, lateral structure formamidinium‐based perovskite FA0.9Cs0.1PbI3 photodetectors are reported which are modified by a solution‐processed organic semiconductor 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) layer for improved photosensitive performance and ambient/flexibility stability. High‐mobility organic semiconductor C8‐BTBT serves as an efficient hole transport layer that fills the grain boundaries and gaps of the FA0.9Cs0.1PbI3 film, enabling rapid extraction and transport of the photo‐generated carriers from the perovskite to the electrodes, resulting in enhanced photosensitive performance of the photodetector. Compared with the original device, the C8‐BTBT‐modified photodetector exhibits dramatically improved performance with a best responsivity of 1278 mA W−1, specific detectivity of 1.58 × 1012 Jones, external quantum efficiency of 298%, and fall time of 14.09 ms, which is 10.84 times less than 152.76 ms of the pure perovskite device. Moreover, the C8‐BTBT film acts as a protective layer for the FA0.9Cs0.1PbI3 film because of its good air stability and effective coverage, which significantly improves the ambient stability of the perovskite photodetector compared with the original device, increasing photocurrent retention from 2.5% to 61.5% or 81.5% at different humidity after 6 days. Furthermore, the C8‐BTBT‐modified perovskite photodetector exhibits outstanding flexibility performance, with only a 5% reduction in photocurrent under bending and almost no change after 200 bending cycles, while those of the pristine perovskite device have degraded to ≈80% and ≈75% under the same conditions, respectively. This study provides a facile and effective solution‐processed‐based strategy for constructing high‐performance and stable perovskite photodetectors.

show abstract

Section: Resultsmentioning

confidence: 98%

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Huang,

Ding,

Liu

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Such as the solution growth method, electrodeposition technique, and membrane transfer method. [148][149][150][151][152][153][154] Fifth, the performances of laser power, divergence angle, and mode modulation should be improved. Because of the laser power, divergence angle and mode modulation are the challenges for the integration and practicability of the electrically pumped nanolasers.…”

Section: Current Challenge and Future Prospectmentioning

confidence: 99%

“…Such as the solution growth method, electrodeposition technique, and membrane transfer method. [ 148–154 ]…”

Section: Current Challenge and Future Prospectmentioning

confidence: 99%

Recent Developments of Electrically Pumped Nanolasers

Ren

Fang

et al. 2023

Laser & Photonics Reviews

View full text Add to dashboard Cite

Electrically pumped nanolasers have achieved many exciting achievements and display a wide range of potential application prospects in the fields of optoelectronic chips, information storage, and biosensing. However, there is lacking an in-depth and extensive review of the recent development of electrically pumped nanolasers. Herein, a detailed and comprehensive overview of the electrically pumped nanolasers is first given according to the device configurations, including electrically pumped single nanolaser, nanoarray lasers, nanobeam lasers, and plasmonic nanolasers with different cavity structures. Furthermore, some problems and challenges restricting the development of electrically pumped nanolasers are summarized, and the corresponding solutions and development directions are proposed. This review will provide valuable suggestions for optimizing the device structure of electrically pumped nanolasers with new high-gain semiconductor materials and particularly further promote their rapid application development.

show abstract

Negative Differential Resistance in the Au-Coated CH₃NH₃PbBr₃ Perovskite Photodetectors with Fast Response

Cited by 2 publications

References 44 publications

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Recent Developments of Electrically Pumped Nanolasers

Contact Info

Product

Resources

About