Negative differential resistance in porous silicon devices at room temperature

Marin, Oscar; Toranzos, V.; Urteaga, Raúl; Comedi, D.; Koropecki, R. R.

doi:10.1016/j.spmi.2014.12.019

Cited by 20 publications

(3 citation statements)

References 29 publications

(33 reference statements)

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“…The negative differential resistance properties are observed on various materials with different morphology such as ZnO nanorod, porous silicon devices and graphene nanoribbon FET [38,64,65]. The NDR property of NiFe 2 O 4 nanowire device is similar to the reported works, which further strengthens the present work.…”

Section: -9supporting

confidence: 89%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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The electronic property of NiFe 2 O 4 nanowire device is investigated through nonequilibrium Green's functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe 2 O 4 nanowire are studied in terms of density of states, transmission spectrum and I-V characteristics. The density of states gets modified with the applied bias voltage across NiFe 2 O 4 nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe 2 O 4 nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe 2 O 4 nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.

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Section: -9supporting

confidence: 89%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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“…A symmetrical curve is observed during the second part of the voltage cycle with V p1′ and V p2′ , which are equal to −20 and −17 V for the first sweep and −24 and −19 V for the second sweep. Similar differential negative resistances were observed in porous silicon with V p1 = 7.5 V, V p2 = 6.0 V, and V stop = 20 V. Additionally, multilevel unipolar resistive switching was measured in the Ag/SiO 2 /Pt structure with V p1 = −0.6 V and V stop between −1 and −4 V.…”

Section: Resultssupporting

confidence: 71%

“…Then, the data are denoised with a digital wavelet transform . As seen in Figure , different memristive behavior is observed compared to that in the high resistance regime, and a negative differential resistance − is observed. Additionally, between +5 and −5 V, diode-like behavior is noticed; further studies with a smaller voltage step would be needed to draw a conclusion on this phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Memristive and Tunneling Effects in 3D Interconnected Silver Nanowires

et al. 2023

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A network of silver nanowires (Ag-NWs) is grown by electrodeposition in a nanoporous membrane with interconnected nanopores. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The network is then functionalized during the etching process, which leads to a high initial resistance as well as memristive behavior. The latter is expected to arise from the creation and the destruction of conducting silver filaments in the functionalized Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a highresistance regime in the GΩ range with tunnel conduction to a lowresistance regime presenting negative differential resistance in the kΩ range.

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