Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction

Song, Jiuxu; Yang, Yintang; Liu, Hongxia; Guo, Lixin

doi:10.1088/1674-4926/32/4/042003

Cited by 7 publications

(3 citation statements)

References 15 publications

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“…The finding reveals that nm long SWCNT shows negative differential resistance. Song et al [46] reported NDR behaviour in (8,0) carbon/boron nitride nanotube heterojunction. They report that under positive and negative bias, the variation in the localization of corresponding molecular orbital under the applied bias voltage leads to NDR behaviour.…”

Section: Methodsmentioning

confidence: 99%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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The electronic property of NiFe 2 O 4 nanowire device is investigated through nonequilibrium Green's functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe 2 O 4 nanowire are studied in terms of density of states, transmission spectrum and I-V characteristics. The density of states gets modified with the applied bias voltage across NiFe 2 O 4 nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe 2 O 4 nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe 2 O 4 nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.

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Section: Methodsmentioning

confidence: 99%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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“…1,2 In two dimensions, the analog of graphene is hexagonal BN (hBN) 3−8 or white graphene and, in one dimension, BN can also form nanoribbons 9,10 and nanotubes. 11,12 As boron and nitrogen are the left and right neighbors of carbon in the periodic table, respectively, similarly structured carbon and BN materials show similar isoelectronic bonds. However, unlike the C–C bond, the B–N bond is polar, which may lead to distinct electronic and optical properties of BN structures in comparison to those of their carbon analogs.…”

Section: Introductionmentioning

confidence: 99%

“…Such asymmetric cBN films are expected to present interesting rectifying effects, which is indeed supported by experimental and theoretical reports. 9,12,24−28 Among them, it is worth mentioning the experimental study 28 where clear rectification in cBN/sp 2 BN/Si heterojunctions is observed. Further, the electron transport behavior is characteristic of typical p–n junction diodes over a range of temperatures varying from 298 up to 573 K. Very recently, another study on the thermal stability of BN/Si p–n heterojunction diodes was also reported.…”

Section: Introductionmentioning

confidence: 99%

Transport Properties of Hydrogenated Cubic Boron Nitride Nanofilms with Gold Electrodes from Density Functional Theory

2017

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The electrical transport properties of a four-layered hydrogen-terminated cubic boron nitride sub-nanometer film in contact with gold electrodes are investigated via density functional calculations. The sample exhibits asymmetric metallic surfaces, a fundamental feature that triggers the system to behave like a typical p–n junction diode for voltage bias in the interval −0.2 ≤ V ≤ 0.2, where a rectification ratio up to 62 is verified. Further, in the wider region −0.3 ≤ V ≤ 0.3, negative differential resistance with a peak-to-valley ratio of 10 is observed. The qualitative behavior of the I – V characteristics is described in terms of the hydrogenated cBN film equilibrium electronic structure. Such a film shows metallic surfaces due to surface electronic states at a fraction of eV above and below the Fermi level of the N–H terminated and B–H terminated surfaces, respectively, with a wide bulk-band gap characteristic of BN materials. Such a mechanism is supported by transmission coefficient calculations, with the Landauer–Büttiker formula governing the I–V characteristics.

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The electronic transport properties of armchair carbon nanotubes with single and multiple horizontal boron-nitride lines: Unusual effects of high bias voltage on I-V characteristics

Khemissi,

Khalfoun

2023

Diamond and Related Materials

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Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction

Cited by 7 publications

References 15 publications

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Transport Properties of Hydrogenated Cubic Boron Nitride Nanofilms with Gold Electrodes from Density Functional Theory

The electronic transport properties of armchair carbon nanotubes with single and multiple horizontal boron-nitride lines: Unusual effects of high bias voltage on I-V characteristics

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