Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures

Abstract

Charge transfer induced ferromagnetism and anomalous temperature increment of coercivity in ultrathin α-Fe 2 O 3 decorated graphene 2D nanostructures

Evolution of Electrical Transport Property in Ge‐Based Negative Differential Resistance Devices under Pulsed High Magnetic Field

“…Negative differential resistance (NDR) effect has been attracting much attention due to its wide application in circuit amplifiers, [1] oscillators, [2] memories, [3] logic functions, [4] etc. At present, the NDR effect has been found in many materials and their devices, such as germanium (Ge), [5][6][7][8][9][10][11][12][13] silicon, [14][15][16] transition metal oxides, [17,18] rubrene/Bi 2 Se 3 , [19] etc. Especially, the research on NDR of germanium (Ge)-based devices is important because of their strong compatibility with the existing semiconductor devices.…”

The role of silicon oxide in the stabilization and magnetoresistance switching of Fe3O4/SiO2/Si heterostructures

“…Low field magnetoresistance has also been reported on this system, with a maximum value of 1.9% at 230 K applying a magnetic field of 0.05 T [26]. More recently, Li et al also reported negative differential resistance in Fe 3 O 4 /SiO 2 /p-Si heterostructures, which due to the folded current-voltage character opens the door to different applications such as oscillators, logic gates, and data storage devices [27]. Given the complexity of spin phenomena, several factors can be related with the inconsistent values reported.…”