Charge-density-wave (CDW) dynamics is studied on a submicron length scale in NbSe 3 and o-TaS 3 . Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative resistance is attributed to the different forces that the deformed CDW and quasiparticles feel: the force on the CDW is merely caused by a difference of the electric potentials, while the quasiparticle current is governed by a difference of the electrochemical potentials. DOI: 10.1103/PhysRevLett.87.126401 PACS numbers: 71.45.Lr, 72.15.Nj A periodic modulation of the conduction electron density is commonly observed in low-dimensional conductors [1]. This charge-density-wave (CDW) state is the ground state in various inorganic and organic materials with a chainlike structure, giving rise to remarkable electrical properties [2,3]. A particularly interesting feature of the CDW is its collective transport mode, somewhat similar to superconductivity [4]. Under an applied electric field, CDWs slide along the crystal, giving rise to a strongly nonlinear conductivity. Since even a small amount of disorder pins the CDWs, sliding occurs only when the applied electric field exceeds a certain threshold.In metallic and superconducting devices, reduction of sizes has revealed a variety of new mesoscopic phenomena. For CDW conductors, the mesoscopic regime has only been studied for small transverse dimensions [5][6][7] because samples of (sub)micron sizes in the chain direction could not be fabricated in a controlled way. Consequently, many aspects of microscopic CDW dynamics are still unknown. Nevertheless, some early studies on a micronscale revealed interesting mesoscopic features related to the CDW phase distribution [8,9]. More recently, artificial submicron CDW devices have been fabricated [10,11].In this paper, we present current-voltage (IV ) characteristics recorded on high-quality NbSe 3 and TaS 3 crystals with probe spacings in the submicron range (see the inset of Fig. 1). On these short length scales, IV curves vary strongly from segment to segment. For some segments the absolute resistance becomes negative, indicating that the moving CDW pumps single-particle carriers in a direction opposite to that of the rest of the sample. Our results show that the micron scale is the typical length scale for this new phenomenon in CDW dynamics.Experiments were carried out on single NbSe 3 and o-TaS 3 crystals with cross sections of 0.2 to 1 mm 2 . Both materials have a very anisotropic, chainlike structure [2]. NbSe 3 exhibits CDW transitions at T P1 145 K and T P2 59 K. At low temperatures a small portion of the conduction electrons remains uncondensed, providing a metallic single-particle channel. In contrast, in o-TaS 3 all electrons condense into the CDW state. As a result, the linear resistance shows semiconducting behavior below the transition temperature of 220 K.A common technique to contact small CDW whiskers consists of putting the crystals on top of metal probes that are evapor...