2013
DOI: 10.1063/1.4792064
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Negative dielectric constant manifested by static electricity

Abstract: Negative dielectric constant has long been pursued for a possible revolution in electronics and photonics. It is usually found in systems containing free electrons under high frequency oscillating field, but not involving static charges or insulating materials. Here, we report the observation of the phenomenon in an insulating polymer containing static electricity, which lasts for several weeks, where negative capacitance persists from <1 Hz up to MHz frequency, also presenting an unusual spiral curve i… Show more

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Cited by 60 publications
(28 citation statements)
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“…For |q| > 0, this leaves ε(q, ω = 0) a freedom to be negative without violating the causality or destroying the stability of the system [4,5]. If this happens, then the inverse permittivity has zeros in the upper half of the complex ω-plane, making the permittivity itself a non-analytic function.In the three-dimensional world the realizations of such negative static permittivity are scarce and they mostly concern exotic non-crystalline systems [6][7][8][9][10]. In this work we show that, above a critical wave-vector q > q c in the first Brillouin zone, the permittivity ε(q, ω) of the quasi-two-dimensional (Q2D) systems of the monolayer graphene and boron nitride is negative in the static limit.…”
mentioning
confidence: 88%
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“…For |q| > 0, this leaves ε(q, ω = 0) a freedom to be negative without violating the causality or destroying the stability of the system [4,5]. If this happens, then the inverse permittivity has zeros in the upper half of the complex ω-plane, making the permittivity itself a non-analytic function.In the three-dimensional world the realizations of such negative static permittivity are scarce and they mostly concern exotic non-crystalline systems [6][7][8][9][10]. In this work we show that, above a critical wave-vector q > q c in the first Brillouin zone, the permittivity ε(q, ω) of the quasi-two-dimensional (Q2D) systems of the monolayer graphene and boron nitride is negative in the static limit.…”
mentioning
confidence: 88%
“…In the three-dimensional world the realizations of such negative static permittivity are scarce and they mostly concern exotic non-crystalline systems [6][7][8][9][10]. In this work we show that, above a critical wave-vector q > q c in the first Brillouin zone, the permittivity ε(q, ω) of the quasi-two-dimensional (Q2D) systems of the monolayer graphene and boron nitride is negative in the static limit.…”
mentioning
confidence: 88%
“…If the imaginary part is positive the effective terminal behavior is capacitive and if it is negative the effective terminal effect is inductive. [6][7][8][9][10][11] In recent years, some researchers have reported a negative capacitance (NC) [6][7][8][9][10][11][12][13] or negative dielectric constant (NDC) [14][15][16] in the forward bias C-V characteristics in some devices. The observation of NDC and NC are important because they imply that an increment of bias voltage produces a decrease in the charge on the electrodes.…”
Section: Introductionmentioning
confidence: 99%
“…Such materials may exist and are stable [15]. At the moment, there are only a few papers that present the results of testing materials with a negative value of dielectric constant [16][17][18][19][20][21]. The mechanism that causes the negative value of the dielectric constant has not been fully understood and explained yet.…”
Section: Introductionmentioning
confidence: 99%