Negative deviations from Matthiessen's rule for SrRuO
 3
 and CaRuO
 3

Klein, Lior; Kats, Yevgeny; Wiser, Nathan; Kończykowski, M.; Reiner, J. W.; Geballe, T. H.; Beasley, M. R.; Kapitulnik, A.

doi:10.1209/epl/i2001-00448-8

Cited by 13 publications

(7 citation statements)

References 21 publications

(26 reference statements)

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“…The change of temperature gradient below T C could be explained by the effect of the decreasing spin scattering on the electrical resistivity in the ferromagnetic phase. 27) On the other hand, no change at T C was observed for SRO thin films prepared at T sub < 773 K. It is known that there is a strong correlation between the magnetic/electric properties and the crystal structure, i.e., Ru-O-Ru distance and the connection angle of the RuO 6 octahedral. 6,28) Since the structure of SRO thin films prepared at low T sub might be slightly more distorted than those prepared at higher T sub , the change of temperature gradient of electrical resistivity at the T C was not evident.…”

Section: Resultsmentioning

confidence: 97%

Microstructure and Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

2006

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SrRuO 3 (SRO) thin films were prepared by laser ablation, and the effects of deposition conditions on the microstructure and electrical conductivity of these films were investigated by changing the substrate temperature (T sub ) and deposition atmosphere. The SRO thin films deposited on quartz substrates in a high vacuum (P ¼ 10 À6 Pa) and an oxygen partial pressure (P O2 ) of 0.13 Pa were amorphous, independent of T sub . Pseudo-cubic SRO thin films were obtained at P O2 ¼ 13 Pa and T sub > 773 K. The Sr to Ru ratio increased with increasing T sub , and free Ru was contained in SRO films prepared at P ¼ 10 À6 Pa. The crystal grain coarsened with increasing T sub and P O2 . The electrical conductivity () of SRO thin films increased with increasing T sub and P O2 , and the highest was obtained at T sub ¼ 973 K and P O2 ¼ 13 Pa. The of SRO films mainly changed with the Sr/Ru ratio and the surface morphology. The change of associated with the magnetic phase transition was observed at 163 K.

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Section: Resultsmentioning

confidence: 97%

Microstructure and Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

2006

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“…The data show significant negative deviations from Matthiessen's rule, where for a fixed irradiation dose, the induced change in resistivity decreases with increasing temperature. Moreover, at a fixed temperature, the increase in resistivity with irradiation is found to be sublinear (Klein et al, 2001).…”

Section: B Resistivity Near the Ferromagnetic Phase Transitionsmentioning

confidence: 88%

Structure, physical properties, and applications ofSrRuO3thin films

et al. 2012

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SrRuO 3 is endowed with three remarkable features. First, it is a moderately correlated material that exhibits several novel physical properties; second, it permits the epitaxial growth of essentially single-crystal films; and third, because it is a good conductor, it has attracted interest as a conducting layer in epitaxial heterostructures with a variety of functional oxides. In this review, the present state of knowledge of SrRuO 3 thin films is summarized. Their role as a model system for studying magnetism and electron transport characterized by intermediate electron correlation and large magnetocrystalline anisotropy is demonstrated. The materials science of SrRuO 3 thin film growth is reviewed, and its relationship to electronic, magnetic, and other physical properties is discussed. Finally, it is argued that, despite all that has been learned, a comprehensive understanding of SrRuO 3 is still lacking and challenges remain.American Physical Society

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“…The itinerant ferromagnet SrRuO 3 has attracted considerable experimental and theoretical effort for its intriguing properties; including, "bad metal" behavior [1,2], deviation from normal metal optical conductivity [3] and negative deviation from Matthiessen's rule [4]. Consequently, there is growing interest in obtaining comprehensive characterization of its properties and in particular its transport behavior.…”

Section: Introductionmentioning

confidence: 99%

Determination of the resistivity anisotropy ofSrRuO3by measuring the planar Hall effect

et al. 2007

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We have measured the planar Hall effect in epitaxial thin films of the itinerant ferromagnet SrRuO3 patterned with their current paths at different angles relative to the crystallographic axes. Based on the results, we have determined that SrRuO3 exhibits small resistivity anisotropy in the entire temperature range of our measurements (between 2 to 300 K); namely, both above and below its Curie temperature ( 150 K). It means that in addition to anisotropy related to magnetism, the resistivity anisotropy of SrRuO3 has an intrinsic, nonmagnetic source. We have found that the two sources of anisotropy have competing effects.

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Negative deviations from Matthiessen's rule for SrRuO ₃ and CaRuO ₃

Cited by 13 publications

References 21 publications

Microstructure and Electrical Conductivity of SrRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

Microstructure and Electrical Conductivity of SrRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

Structure, physical properties, and applications ofSrRuO3thin films

Determination of the resistivity anisotropy ofSrRuO3by measuring the planar Hall effect

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Negative deviations from Matthiessen's rule for SrRuO 3 and CaRuO 3

Cited by 13 publications

References 21 publications

Microstructure and Electrical Conductivity of SrRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

Microstructure and Electrical Conductivity of SrRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

Structure, physical properties, and applications ofSrRuO3thin films

Determination of the resistivity anisotropy ofSrRuO3by measuring the planar Hall effect

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Product

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Negative deviations from Matthiessen's rule for SrRuO ₃ and CaRuO ₃