Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film

Park, Sang‐Hyun; Chun, Min Chul; Park, Solmin; Park, Ga-yeon; Jung, Moonyoung; Noh, Youngji; Ahn, Seung‐Eon; Kang, Bo Soo

doi:10.1016/j.cap.2018.12.017

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…Ferroelectric thin films of HfO 2 and ZrO 2 have recently garnered considerable attention due to their potential applications in various fields such as nonvolatile memories, 1–5 ferroelectric field-effect transistors, 6–8 energy storage, 9–11 negative capacitance, 12–14 and tunnel junctions. 15,16 HfO 2 and ZrO 2 were also considered for nonlinear optical applications, as they are compatible with silicon photonics.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric ZrO₂ phases from infrared spectroscopy

El Boutaybi,

Cervasio,

Degezelle

et al. 2023

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

Ferroelectric ZrO₂ phases from infrared spectroscopy

El Boutaybi,

Cervasio,

Degezelle

et al. 2023

J. Mater. Chem. C

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“…[4,5] Thanks to their ferroelectric behavior HfO 2 and ZrO 2 -based compounds have demonstrated potential in various technological fields, offering opportunities for advancements in electronic devices. [5][6][7][8][9][10][11][12][13] Antiferroelectricity has also been reported in ZrO 2 and ZrO 2rich compounds, which further expands the prospects for these materials. [14,15] Commonly reported polar phases of HfO 2 and ZrO 2 are the orthorhombic Pbc2 1 (o-phase) and rhombohedral R3m (r-phase) phases.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectricity in Epitaxial Tetragonal ZrO₂ Thin Films

El Boutaybi,

Maroutian,

Largeau

et al. 2023

Adv Elect Materials

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The crystal structure and ferroelectric properties of epitaxial ZrO2 films ranging from 7 to 42 nm thickness grown on La0.67Sr0.33MnO3 buffered (110)‐oriented SrTiO3 substrate are reported. By employing X‐ray diffraction, a tetragonal phase (t‐phase) at all investigated thicknesses, with slight in‐plane strain due to the substrate in the thinnest films, is confirmed. Further confirmation of the t‐phase is obtained through infrared absorption spectroscopy with synchrotron light, performed on ZrO2 membrane transferred onto a high resistive silicon substrate. Up to a thickness of 31 nm, the ZrO2 epitaxial films exhibit ferroelectric behavior, at variance with the antiferroelectric behavior reported previously for the t‐phase in polycrystalline films. However, the ferroelectricity is found here to diminish with increasing film thickness, with a polarization of 13 µC cm−2 and down to 1 µC cm−2 for 7 and 31 nm thick ZrO2 films, respectively. Given that the t‐phase is nonpolar, the observations emphasize the influence of external factors, in promoting polarization in t‐ZrO2 thin films. These findings provide new insights into the ferroelectric properties and structure of ZrO2 thin films, and open up new directions to investigate the origin of ferroelectricity in ZrO2 and to optimize this material for future applications.

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Wake‐Up Effect in HfO₂‐Based Ferroelectric Films

Jiang

Luo

et al. 2020

Adv Elect Materials

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HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been confirmed that various dopants can induce ferroelectricity in HfO2‐based films, and the “wake‐up” effect in HfO2 films with different dopants deposited by different processes has been studied extensively. Recent developments in the wake‐up effect of doped HfO2‐based films are presented. Aside from the differences between the various ferroelectric materials and their deposition methods, the electrodes used in a ferroelectric capacitor, which determine the nature of the interface between the electrode and the ferroelectric layer, can strongly influence the characteristics of the wake‐up effect. The rate of variation of the remanent polarization shows certain trends with different dopants. Based on the wake‐up mechanisms, many methods to optimize and control this effect are presented in this letter. Until now, the reported mechanism explanations of the wake‐up effect all aimed at one type of specific dopant or deposition technique, but can't systematically interpret why the root causes might be different with different dopants and deposition processes. There is also a lack of in‐depth research on the effects of interfacial layer with respect to different electrode material.

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Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film

Cited by 9 publications

References 20 publications

Ferroelectric ZrO₂ phases from infrared spectroscopy

Ferroelectric ZrO₂ phases from infrared spectroscopy

Ferroelectricity in Epitaxial Tetragonal ZrO₂ Thin Films

Wake‐Up Effect in HfO₂‐Based Ferroelectric Films

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Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film

Cited by 9 publications

References 20 publications

Ferroelectric ZrO2 phases from infrared spectroscopy

Ferroelectric ZrO2 phases from infrared spectroscopy

Ferroelectricity in Epitaxial Tetragonal ZrO2 Thin Films

Wake‐Up Effect in HfO2‐Based Ferroelectric Films

Contact Info

Product

Resources

About

Ferroelectric ZrO₂ phases from infrared spectroscopy

Ferroelectric ZrO₂ phases from infrared spectroscopy

Ferroelectricity in Epitaxial Tetragonal ZrO₂ Thin Films

Wake‐Up Effect in HfO₂‐Based Ferroelectric Films