Negative and positive magnetoresistance in the itinerant antiferromagnet<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>BaMn</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>P</mml:mi><mml:msub><mml:mi>n</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>P</mml:mi><mml:mi>n</mml:mi></mml:mrow></mml:math>= P, As, Sb, and Bi)

Huynh, Kim Khuong; Ogasawara, Takuma; Kitahara, Keita; Tanabe, Yasuhiro; Matsushita, Stephane Yu; Tahara, Time; Kida, Takanori; Hagiwara, Masayuki; Arčon, Denis; Tanigaki, Katsumi

doi:10.1103/physrevb.99.195111

Cited by 15 publications

(14 citation statements)

References 40 publications

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“…The deviations from the fittings at H ab < 3 T in Fig. 3(a) and (b) are mainly due to the effect of a positive MR [9,10] that is not included in the scaling theory.…”

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confidence: 90%

“…Our model compound is single crystalline BaMn 2 Bi 2 [Fig. 1(a)], the end-member in the family of half-filled G-type AF BaMn 2 Pn 2 's (Pn stands for As, Sb, and Bi) [9][10][11]. In these materials, structurally similar to their sister BaFe 2 As 2 with a 3d 6 electronic shell [7], five 3d orbitals are essential to the electronic properties.…”

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confidence: 99%

“…1(d), the insulating behavior of BaMn 2 Bi 2 is effectively suppressed by H ab 's. Meanwhile, magnetic fields parallel to the AF axis (H c ) result in a much smaller effect [9][10][11]. Our analyses of Hall effects revealed a clear delocalization effect of H ab , as the carrier mobility µ is strongly enhanced, whereas the carrier number is unaffected [16].…”

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confidence: 99%

“…2, is consistent with this type of AL. Because the AL transition is tunable solely via the perpendicular H ab [9,10], the random gauge field causing it may have a close connection to the fluctuations of the Mott-like AF. It has been known that a perpendicular field H ab can suppress the G-AF fluctuations effectively whereas a parallel H c cannot [34].…”

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confidence: 99%

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Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

Ogasawara,

Huynh,

Matsushita

et al. 2022

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We report a metal-insulator transition (MIT) in the half-filled mutltiorbital antiferromagnet (AF) BaMn2Bi2 that is tunable by perpendicular magnetic field. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated 3d-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the dxy-derived band dominate the transport properties and exhibit the Anderson localization, whereas other 3d bands show clear Mott-like behaviors with their spins order into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to the weak charge coupling.

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“…The deviations from the fittings at H ab < 3 T in Fig. 3(a) and (b) are mainly due to the effect of a positive MR [9,10] that is not included in the scaling theory.…”

mentioning

confidence: 90%

mentioning

confidence: 99%

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confidence: 99%

mentioning

confidence: 99%

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Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

Ogasawara,

Huynh,

Matsushita

et al. 2022

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“…A subfamily of BaMn 2 P n 2 (P n: P, As, Sb, and Bi) compounds can be differentiated from the other BaTM 2 P n 2 's for their remarkable ground states with a parity-time symmetry [18], orbital-selective magnetism [19], and intriguing transport properties [20]. Unlike most of the other TM's, where stable BaTM 2 P n 2 phases are only available with P and As, Mn forms a complete set of BaMn 2 P n 2 compounds with all pnictogen elements from P to Bi.…”

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confidence: 99%

Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet

Ogasawara,

Huynh,

Tahara

et al. 2020

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A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn 2 Bi 2 when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn 2 Bi 2 to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above 2 K. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn 2 Bi 2 .

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Anomalous magnetoresistance and magneto-thermal properties of the half-Heuslers, RPdSi (R = Y, Gd–Er)

Mukhopadhyay¹,

Singh²,

Sen³

et al. 2021

J. Phys.: Condens. Matter

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Here, we present a detailed study on the magnetic, magneto-transport, and magneto-thermal properties of the equiatomic half-Heusler compounds with the general formula, RPdSi (R = Y and rare-earth, Gd-Er). These materials crystallize in two different superstructures of the TiNiSi-type orthorhombic unit cell with the space groups Pnma and Pmmn. Our magnetic and heat capacity measurements reveal the onset of an antiferromagnetic (AFM) ordering in the temperature range 3-16 K for all the local moments bearing RPdSi compounds, while the non-magnetic analog, YPdSi exhibits a Pauli-paramagnetic behaviour. The AFM state of these compounds can be tuned by magnetic field and temperature as demonstrated by the magnetic measurements below the Neel temperature (T N ). Most importantly, this tuning of the magnetic structure is well documented in the complex temperature and field dependence of magnetoresistance (MR) and magnetocaloric effect (MCE). Our study establishes a striking correlation of the commensurate/incommensurate AFM structure with that of positive/negative MR and MCE in this series of compounds. We emphasize that such a framework applies to a large number of AFM intermetallic systems.

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Negative and positive magnetoresistance in the itinerant antiferromagnetBaMn2Pn2(Pn= P, As, Sb, and Bi)

Cited by 15 publications

References 40 publications

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet

Anomalous magnetoresistance and magneto-thermal properties of the half-Heuslers, RPdSi (R = Y, Gd–Er)

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