Nearly Perfect Polycrystalline, Large-Grained Silicon Arrays Formed at Low-Temperature Ambient by Local Pyrolysis

Choi, Jun Hee; Ahn, Hye‐Jin; Lee, Yun‐Sung; Ryu, Youn Taek; Cho, Kyoung Sang; Kim, Sun Il; Baik, Chan Wook; Kim, Sang Woo; Lee, Eun Hong; Kim, Kun-Su; Kim, Miyoung; Kim, Jong Min

doi:10.1021/cg3001015

Cited by 6 publications

(5 citation statements)

References 29 publications

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“…The release method was based on the formation of nanovoids at the LT‐GaN/Ti hetero‐interface and post‐mechanical treatment that accurately weakened the hetero‐interface. This method provides a new tool to realize flexible/stretchable blue or green EL devices having high performance, low cost, and scalability . The suggested transfer method might also be used for transferring global epitaxy‐based LED or vertical‐cavity surface‐emitting laser structures onto arbitrary substrates.…”

Section: Resultsmentioning

confidence: 99%

Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer

Choi

Cho

Lee

et al. 2013

Advanced Optical Materials

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Recently, achieving flexible and highly efficient light‐emitting elements is the most noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light‐emitting diodes (LEDs) are demonstrated based on a unique transfer method. The LED structure consisting of GaN pyramid arrays are first fabricated on an amorphous glass‐based template with a low‐temperature gallium nitride/titanium (LT‐GaN/Ti) hetero‐interface, then released and embedded into a flexible or stretchable substrate using a specialized interface control. Nanovoids created during thermal annealing render the hetero‐interface weaker than the other interfaces. This interface is further weakened by a post‐mechanical treatment for gentle release of the GaN pyramid arrays from the interface during a transfer process. The LEDs typically have a total thickness of }70 lm and exhibit stable surface‐emitting electroluminescence even at a bending radius of }2 mm with exceptionally high luminance values of 595 and 175 cd/m2 at peak wavelengths of 514 and 483 nm, respectively. The results suggest a route to high brightness, large, flexible/stretchable blue or green lighting or displays.

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Section: Resultsmentioning

confidence: 99%

Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer

Choi

Cho

Lee

et al. 2013

Advanced Optical Materials

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Section: Selective Synthesismentioning

confidence: 99%

“…[79][80][81][82][83][84][85][86] We have also demonstrated that an array of metallic microbridges such as molybdenum on ordinary glass substrates can be selectively heated up to 1200 °C while maintaining the substrate temperature below 100 °C (Figure 7 b), and have used the bridges for the synthesis of various materials, including polycrystalline silicon (p-Si) [ 87 ] and SWCNTs, [ 88 ] as well as for the annealing of lanthanum hexaboride (LaB 6 ) [ 89 ] and EL patterning. [ 90 ] We also successfully synthesized ZnO nanorods and ZnO/GaN coreshell nanorod heterostructures (Figure 7 c).…”

Section: Progress Reportmentioning

confidence: 99%

“…[ 79,80 ] When the synthesized material is larger than the microbridges, precise control of the synthesis temperature becomes challenging due to the signifi cant heat capacity. With local synthesis of p-Si using silane (SiH 4 ), it was found that variations in the synthesis temperature did not signifi cantly degrade the quality of the p-Si layer, and that growth occurred in a concentric mode [ 87 ] around the microheater (Figure 7 f), which chould be due to the uniform decomposition of SiH 4 around the microheater. With GaN, only amorphous GaN has a smooth surface (left panel, Figure 7 g).…”

Section: Progress Reportmentioning

confidence: 99%

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Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Choi

Kim

Liu

et al. 2015

Advanced Optical Materials

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There have been significant recent developments in the growth of single‐crystal gallium nitride (GaN) on unconventional templates for large‐area blue or green light‐emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single‐crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer‐transfer onto foreign substrates. Recent progress in low‐temperature GaN‐based red–green–blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer‐transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer‐transfer technologies are expected to lead to new lighting and display devices with high efficiency and full‐color tunability, which are suitable for large‐area, stretchable display and lighting applications.

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“…6 (b)). Based on selective heating method [6][7][8][9][10], we achieved proof-of-concept level polycrystalline GaN (poly-GaN) using sodalime glass substrates at low-temperature ambient (Figs. 7 (a)-(e)).…”

Section: New Attempt To Form High-quality Gan At Low Temperaturesmentioning

confidence: 99%

Prospect of GaN light-emitting diodes grown on glass substrates

Choi¹,

Lee

Baik

et al. 2013

SPIE Proceedings

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We report the enhanced electroluminescence (EL) of GaN light-emitting diodes (LEDs) on glass substrates. We found that GaN morphology affected the EL and achieved enhanced EL of GaN-LEDs on glass by identifying the optimal GaN morphology having both high crystallinity and compatibility for device fabrication. At proper growth temperature, GaN crystallinity was improved with increasing GaN crystal size irrespective of the GaN crystallographic orientation, as determined by spatially resolved cathodoluminescent spectroscopy. The optimized GaN LEDs on glass composed of the nearly single-crystalline GaN pyramid arrays exhibited excellent microscopic EL uniformity and luminance values of ~ 9100 cd/m 2 at the peak wavelength of 495 nm. The EL color could be adjusted mainly by varying the quantum well temperature. In addition, new growth methods for achieving high GaN crystallinity at a low growth temperature (e.g. ~700°C) were briefly reviewed and attempted by adopting selective heating. We expect that performance of the GaN LEDs on glass can be much enhanced by enhancing GaN crystallinity and p-GaN coating, and evolvement of lowtemperature growth of high-quality GaN might even customize ordinary glass as a substrate, which enables highperformance, low-cost lighting or display.

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Nearly Perfect Polycrystalline, Large-Grained Silicon Arrays Formed at Low-Temperature Ambient by Local Pyrolysis

Cited by 6 publications

References 29 publications

Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer

Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Prospect of GaN light-emitting diodes grown on glass substrates

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