Near zero thermal expansion in Ge-doped Mn 3 GaN compounds

Tunable negative thermal expansion and structural evolution in antiperovskite Mn3Ga1−xGexN (0 ≤ x ≤ 1.0)

“…In previous studies, the most important finding is the broadening of MVE by Ge substituting in Mn 3 Cu 1− x Ge x N, this strongly suggests that the instability between the cubic and the T 4 structures induced by Ge substitution is related to the broadening of MVE . Takenaka et al and Sun et al also reported that the discontinuous contraction of Mn 3 GaN was modified into the continuous contraction by partial substitution of Ge for Ga . The Ge‐doped Mn 3 GaN compounds effectively improved the NTE properties to a certain extent.…”

Phase transition and near-zero thermal expansion of Zr 0.5 Hf 0.5 VPO 7

“…The NTE materials provide an effective way to control the thermal expansion coefficient and temperature range. [1][2][3][4][5][6][7][8][9] A series of NTE materials such as AM 2 O 8 (A = Zr, Hf; M = W, Mo), [1][2][3][4][5][6] AM 2 O 7 (A = Zr, Hf; M = V, P), [7][8][9][10][11][12] and A 2 M 3 O 12 (A = Y, Sc, Fe; M = W, Mo) has been reported. [13][14][15][16][17][18][19] Recently researchers investigated the materials with near-ZTE, which include Mn 3 Cu 0.5 A 0.5 N (A = Ni, Sn)/Cu composites, [3] Mn 3 Ga 0.5 Ge 0.5 N, [4] ZrW 2 O 8 /A (A = ZrO 2 , Al 2 O 3 , etc.)…”