Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE

Fujita, Yasuhisa; Yanase, Shogo; Nishikori, Hirokazu; Hiragino, Yuto; Furubayashi, Yutaka; Lin, Jie; Yoshida, Toshiyuki

doi:10.1016/j.jcrysgro.2016.10.085

Cited by 12 publications

(10 citation statements)

References 27 publications

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“…It was considered that the deep-level transition for EL emissions was saturated by the higher injected carrier density [ 23 ]. The EL peak energy of LEDs shifted toward the lower energy side compared to the PL spectra, due to the heating effect of temperature rises during operation of the devices [ 15 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

“…Incorporating nitrogen dopants and co-dopants into ZnO has previously been reported [ 10 , 11 , 12 ]. Some reports have shown nitrogen-doped p-type ZnO- or ZnMgO-based LEDs with single-crystal films using epitaxial growth technologies [ 13 , 14 , 15 ]. Unfortunately, single-crystal substrates and epitaxial growth technologies require strick fabrication controls and are currently not cost-effective.…”

Section: Introductionmentioning

confidence: 99%

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The Role of Nitrogen Dopants in ZnO Nanoparticle-Based Light Emitting Diodes

Shafiqul

Deep

Lin³

et al. 2022

Nanomaterials

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In this work, nitrogen-doped ZnO nanoparticles were synthesized in various conditions by the gas evaporation method with DC arc plasma. Nitrogen concentrations of 6.38 × 1018 cm−3 to 2.6 × 1019 cm−3 were obtained at a chamber pressure of 150 torr, using arc currents of 20 A to 70 A. The intensities of local vibrational modes at 275 cm−1 and 581 cm−1 in the Raman spectra of ZnO nanoparticles showed a dependency on the nitrogen concentration in the ZnO nanoparticles. The ratios of donor–acceptor pair and exciton emissions in the photoluminescence spectra of nitrogen-doped ZnO nanoparticles, and the electroluminescence of light-emitting diodes based on these nanoparticles, were nearly proportional to the Raman peak’s intensity at 275 cm−1. The results indicated that the nitrogen dopants in the ZnO nanoparticles were acting as an acceptor.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Role of Nitrogen Dopants in ZnO Nanoparticle-Based Light Emitting Diodes

Shafiqul

Deep

Lin³

et al. 2022

Nanomaterials

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“…Recently, ZnO‐based LEDs were fabricated using nitrogen‐doped ZnO or MgZnO with single crystal films. [ 5–7 ]…”

Section: Introductionmentioning

confidence: 99%

“…Recently, ZnO-based LEDs were fabricated using nitrogendoped ZnO or MgZnO with single crystal films. [5][6][7] The device fabrication using nanoparticles (NPs) is a unique and cost-effective technique. Nitrogen (N)-doped ZnO NPs were researched by several groups using various fabrication methods.…”

Section: Introductionmentioning

confidence: 99%

Demonstration and Evaluation of p‐Type and n‐Type ZnO Nanoparticles‐Based Homojunction UV Light‐Emitting Diodes

Shafiqul

Deep

Lin³

et al. 2022

Physica Rapid Research Ltrs

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The world's first homojunction UV light‐emitting diode (LED) based on both p‐type and n‐type ZnO nanoparticles (NPs) is demonstrated. Nitrogen‐doped ZnO and gallium‐doped ZnO NPs are provided to fabricate p‐type and n‐type NP layers, respectively. The LEDs with the structures of p‐ZnO/GZO and p‐ZnO/n‐ZnO/GZO are fabricated. These devices show near UV electroluminescence (EL) at room temperature and emission power doubled by inserting the n‐ZnO NP layer. By comparing the results of I–V, EL and photoluminescence for LEDs, it can be confirmed that the holes inject from p‐ZnO NP layer to n‐ZnO NP layer and the mechanism of these devices are that of p‐n junction LEDs.

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“…ZnO has attracted the attention of many researchers for many years due to some of its properties such as wide band gap (3.30eV), high exciton binding energy (60MeV) at room temperature, stable hexagonal wurtzite structure with space group P63mc [1,2]. These features have made it desirable for several applications including photocatalysis [3], surface acoustic wave devices [4], photodetectors [5], gas sensors [6], light-emitting diodes [7,8], and solar cells [9]. ZnO lms has been produced using various methods such as thermal evaporation [10], pulsed laser [11], sol-gel spin-coated [12,13], spray pyrolysis [14], rf sputtering [15,16], electro deposition [17], dc-rf magnetron sputtering [18,19], metal-organic chemical vapor deposition [20], and so on.…”

Section: Introductionmentioning

confidence: 99%

Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

Kutlu¹,

Erdogan²,

Sedefoğlu³

et al. 2021

Preprint

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This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

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Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE

Cited by 12 publications

References 27 publications

The Role of Nitrogen Dopants in ZnO Nanoparticle-Based Light Emitting Diodes

The Role of Nitrogen Dopants in ZnO Nanoparticle-Based Light Emitting Diodes

Demonstration and Evaluation of p‐Type and n‐Type ZnO Nanoparticles‐Based Homojunction UV Light‐Emitting Diodes

Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

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