Near ultraviolet enhanced 4H-SiC Schottky diode

Abstract

Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and compared with the experimental data.

Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales

“…Emitting diode [15], Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) [16], Bipolar Junction Transistor (BJT) [17], Schottky diodes [18] Composite and coating High hardness, high strength, wear resistance pistons, valve heads, bearings [19], armor [20] Porous material High porosity, less volume density, high mechanical strength Water filtration, filters, polymer matrix composites [3,8] Micro-Electro-Mechanical System (MEMS)…”

Zn–Al Layered Double Hydroxide Film Functionalized by a Luminescent Octahedral Molybdenum Cluster: Ultraviolet–Visible Photoconductivity Response

“…Particularly, the efficiency and applicability of the light energy converters or photodetectors essentially depend on their light sensitivity performance, fast photocurrent response speed, and a linear dependence of the optical and current values in the industry. During the past few decades, the use of various wide band-gap semiconducting inorganic materials, such as ZnO, MoS 2 , ZnS, and SiC for the light energy converters, has been mainly reported due to their simple structure and high photoconductive gain. − The visible (Vis) sensing photodetector using solar light energy became an interesting study for sustainable energy development goals. , However, the development of broadband photodetectors, having an efficient photoactivity in the UV–Vis light range, low-cost, and environmentally friendly material and process, is facing many challenges for researchers. The layered double hydroxide (LDH), one of the promising inorganic matrices for the nanocomposite, was expressed by the formulation of [M 2+ 1– x M 3+ x (OH) 2 ] x + ·(A n – ) x / n · m H 2 O (M II = Zn, Ni, Co, Mn, etc.…”

“…During the last few decades, the use of various wide band-gap semiconducting inorganic materials, such as ZnO, MoS2, ZnS, SiC for the light energy converters, has been mainly reported due to their simple structure and high photoconductive gain. [1][2][3][4] The visible (Vis) sensing photodetector using solar light energy became an interesting study for sustainable energy development goals. 5, However, the development of broadband photodetectors, having an efficient photoactivity in the UV-Vis light range, low cost, and environmentally friendly material and process, is facing many challenges for researchers.…”

Near Ultraviolet Photoresponse of a Silicon Carbide and Tantalum Boride Heterostructure

“…In general, many UV photodetectors have found applications in areas such as environmental sensing, polarization imaging [4], artificial intelligence and autonomous vehicles [5]. They are generally based on wide bandgap semiconductors such as silicon carbide [6,7], gallium oxide [8][9][10], gallium nitride [11,12], zinc oxide [13][14][15][16], other oxides [17] and polymers [18]. In our case, a photodetector is constructed on top of an n-doped silicon carbide substrate with a carrier concentration of 10 18 cm -3 by adding a thin layer of tantalum monoboride (TaB) on top of the substrate.…”