Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

Kuhudzai, R.J.; Berg, N.G. van der; Malherbe, J.B.; Hlatshwayo, Thulani Thokozani; Theron, C.C.; Buys, Angela; Botha, André; Wendler, E.; Wesch, W.

doi:10.1016/j.nimb.2014.02.072

Cited by 6 publications

(9 citation statements)

References 24 publications

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“…These results are in agreement with Scanning electron microscopy (SEM) results from our previous measurements in the same temperature range [17,20].…”

Section: Resultssupporting

confidence: 92%

“…The increase in rms roughness observed for iodine and silver implanted samples from about 21 and 28 nm (after 1200°C) to about 71 and 38 nm (after 1300°C) respectively, can be attributed to crystal growth on surfaces. These results were confirmed by SEM (images not shown), and is in line with our previously reported results [17]. A corresponding increase can also be seen from the surface area difference curves.…”

Section: Raman Intensitysupporting

confidence: 92%

“…This is due to the well-defined repetitive structure of the hexagonal crystal structure. The broadening, asymmetry and slight shift (towards the lower wavenumbers) of the LO (wavenumber 960 cm À1 ) peak of the annealed sample is due to spatial phonon confinement arising from the break down in periodicity due to the nano crystalline nature of the resulting near surface polycrystalline layer [17,18]. The UV exciting laser is capable of isolating the contribution from this near surface region from the bulk Raman signal contributions due to its low penetration depths in 6H-SiC of approximately 50-100 nm [15].…”

Section: Methodsmentioning

confidence: 99%

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Kuhudzai

Malherbe

Berg

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…These results are in agreement with Scanning electron microscopy (SEM) results from our previous measurements in the same temperature range [17,20].…”

Section: Resultssupporting

confidence: 92%

Section: Raman Intensitysupporting

confidence: 92%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Kuhudzai

Malherbe

Berg

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…The recrystallization of the a-SiC layer on top of single crystal 6H-SiC, at the same annealing temperature and time, shows a slight dependence on the implanted atomic species [22]. As shown in Figure 5(a) a Cs implanted sample shows a fairly flat surface with small crystallites and small cavities.…”

Section: Resultsmentioning

confidence: 93%

“…Such a result is shown in Figure 6. This seemingly contradictory result is explained in references [3] and [22] and is based on the step-flow growth modes operating in SiC.…”

Section: Resultsmentioning

confidence: 98%

Scanning electron microscopy of the surfaces of ion implanted SiC

Malherbe

Berg

Kuhudzai

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface. johan.malherbe@up.ac.za

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Advances in ion beam modification of semiconductors

Elliman

Williams

2015

Current Opinion in Solid State and Materials Science

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Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

Cited by 6 publications

References 24 publications

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Scanning electron microscopy of the surfaces of ion implanted SiC

Advances in ion beam modification of semiconductors

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