2020
DOI: 10.1038/s41586-020-2717-7
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Near-perfect photon utilization in an air-bridge thermophotovoltaic cell

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Cited by 145 publications
(121 citation statements)
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References 41 publications
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“…5-7 represent a microscopic insight into one of today's most important renewable-energy technologies, which can only be obtained at this level of detail with accurate selfconsistent electro-optical models applicable for unevenly excited structures. While these effects do not crucially alter the macroscopic performance of the device studied here, they are expected to be pivotal in selected emerging devices where optical-energy transport primarily takes place, e.g., within cavities or through near fields [27][28][29].…”
Section: Final Remarks On the Resultsmentioning
confidence: 96%
“…5-7 represent a microscopic insight into one of today's most important renewable-energy technologies, which can only be obtained at this level of detail with accurate selfconsistent electro-optical models applicable for unevenly excited structures. While these effects do not crucially alter the macroscopic performance of the device studied here, they are expected to be pivotal in selected emerging devices where optical-energy transport primarily takes place, e.g., within cavities or through near fields [27][28][29].…”
Section: Final Remarks On the Resultsmentioning
confidence: 96%
“…The implementation of BSRs in single‐junction and multi‐junction PV cells has been studied for solar and thermophotovoltaic applications [29, 39–41]. However, to the best of our knowledge, these reflectors have not been implemented in multi‐junction PPCs based on one absorber material yet.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, as illustrated in Figure 3, InGaAs (0.74 eV) and GaSb TPV cells recorded the highest cell efficiencies, which demonstrates the maturity of these structures. Record TPV cell efficiencies for various materials Ge [196], GaSb [3,131,134], InAs [204], InGaAs [52,103,159,163,185,186], InAsSb [205], InGaSb [200], InGaAsSb [63,198,199] and cascade InAs/GaSb/AlSb [201].…”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%
“…Results show a 3–5% improvement when the light trapping is implemented. Recently, Burger et al [ 185 ] suggested the potential for a dramatic increase in conversion efficiency through improved spectral selectivity and recycling of longer IR, combined with the potential for reduced module costs through wafer reuse using thin-film TPV. The air-bridge InGaAs thin-film device with gold rear mirror reflector was investigated to realize highly selective absorption of above-bandgap radiations, enabling more efficient photon recycle and improving the TPV performance.…”
Section: Ingaas-based Tpv Cellmentioning
confidence: 99%
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