Near-net shaped Al/SiCP composites via vacuum-pressure infiltration combined with gelcasting

Dong, Cuige; Wang, Richu; Chen, Yixin; Peng, Chaoqun; Zeng, Jing

doi:10.1016/s1003-6326(20)65310-9

Cited by 9 publications

(4 citation statements)

References 22 publications

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“…[16][17][18] Nevertheless, when the thickness continues to increase, there are still some problems such as insufficient infiltration depth and incomplete infiltration, [19] which are related to the wettability of SiCp and aluminum melt. [20][21][22][23] Melt alloying and SiCp surface treatment are the main methods to improve the wettability between aluminum melt and SiCp. In the aspect of melt alloying, An et al [24] improved the wettability of SiC-Al system by adding Si, Mg, and other alloying elements to the aluminum melt, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

et al. 2023

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A new cooling crystallization method is applied to plate copper on SiCp. Cu(NO3)2·3H2O is crystallized on SiCp by decreasing the solution temperature, and is heat‐treated to obtain CuO coating which is finally reduced to copper coating. Based on the optimizing of SiCp content and CuO reduction temperature, the effects of copper plating on SiCp on the spreading and infiltration of AlSi12 alloy melt are studied. The results show that the optimum coating effect is achieved when the SiCp content is 11.63% and the reduction temperature of CuO is 475 °C. The spreading area of AlSi12 alloy melt on the 15 μm copper‐coated SiCp increases by 53.27% compared to the uncoated SiCp when holds at 950 °C for 20 min, indicating that copper plating has a significant improvement on the wettability of AlSi12 melt and SiCp. Additionally, infiltration preparation of copper‐plated SiCp/Al alloy composites is achieved at a pressure of 0.3 MPa, but not under pressureless conditions. The main reason for this is the granular Cu on SiCp cannot form a complete Cu film. Therefore, the formation of complete Cu films on SiCp is presumed to be an important development direction for solving the problem of infiltration preparing ultrathick SiCp/Al composites.

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Section: Introductionmentioning

confidence: 99%

“…[ 16–18 ] Nevertheless, when the thickness continues to increase, there are still some problems such as insufficient infiltration depth and incomplete infiltration, [ 19 ] which are related to the wettability of SiCp and aluminum melt. [ 20–23 ]…”

Section: Introductionmentioning

confidence: 99%

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

et al. 2023

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“…Moreover, superior to other ceramic additives like SiC, diamond and Si 3 N 4 , Al/Si composites demonstrate a much lower cost and good recyclability, since Al/Si composites can be recycled and processed into Al-Si alloys, which are a series of cast Al alloys widely used in the structural parts of machines. A variety of methods are adopted to prepare Al/Si composites, including squeeze casting [32,33], gas-pressured infiltration [34], vacuum pressure infiltration [35][36][37], spray atomization and deposition [38], spark plasma sintering (SPS) [15,16,[22][23][24]39], hot pressing [40][41][42], etc. These methods can be classified into two categories: powder metallurgy and liquid phase methods.…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis and the Thermal Properties of Al/Si Composites Prepared via Fast Hot-Pressing Sintering

Jia,

Hei,

et al. 2023

Metals

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In this paper, a novel power sintering technique, named fast hot-pressing sintering (FHP), which is able to achieve an ultrahigh heating rate similar to the spark plasma sintering (SPS) technique, but at a much lower cost, was applied to prepare a series of Al/Si composites with different Si volume ratios (12 vol.% to 70 vol.%) to meet the requirements of advanced packaging materials for electronic devices. In contrast to SPS, the FHP oven possesses a safe and budget-friendly current power supply, rather than a complex and expensive pulse power supply, for its heating power. The optimized sintering parameters (temperature, pressure and holding time) of FHP for preparing Al/Si composites were investigated and determined as 470 °C, 300 MPa and 5 min, respectively. In order to characterize the potential of Al/Si composites as packaging materials, thermal conductivities and coefficients of thermal expansion were studied. The thermal conductivity of the Al-40Si composite sintered by the FHP method is higher than that of the conventional SPS method (139 to 107 W m−1 K−1). With the increase in Si, the thermal conductivities and coefficients of thermal expansion on both decreases. Furthermore, the thermal conductivities obey the Agari model, whereas the coefficient of thermal expansion and Si volume ratios obey additivity. The numeric modeling would help develop required packaging materials based on the thermal performances of the substrate materials, like Si or GaAs semiconductor devices.

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“…etal. fabricated the near-net shaped Al/SiC P composites with high volume fraction of SiC particles by vacuum-pressure infiltration, and the composites exhibits high TC and low CTE [2]. Wang W.J.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of SiCp/Al composites electronic packaging components by centrifugal casting and their microstructure

Lin

LIU²,

CHE³

2022

International Conference on Mechanisms and Robotics (ICMAR 2022)

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The centrifugal casting method was introduced to successfully fabricate the SiCp/Al composites electronic packaging components. Three zones including the SiC particle segregation zone, matrix alloy region and inclusion collecting zone were observed on the cross section of the casting due to the SiC particles in the slurry migrating towards the centrifugal force direction while the inclusions segregating to the revolving axis in the centrifugal field. The macro-morphologies and the microstructures of the castings were observed. The results show that the electronic packaging components obtained from the particle segregation zone has a dense structure and a uniform distribution of SiC particles. Especially, the leading-out wire holes on the components were directly formed during the centrifugal casting process. The castings had the most remarkable segregation of SiC particles, the volume fraction of SiC particles in the particle segregation zone can reach the largest value of 61%.

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Near-net shaped Al/SiCP composites via vacuum-pressure infiltration combined with gelcasting

Cited by 9 publications

References 22 publications

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

Facile Synthesis and the Thermal Properties of Al/Si Composites Prepared via Fast Hot-Pressing Sintering

Fabrication of SiCp/Al composites electronic packaging components by centrifugal casting and their microstructure

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