Near-Ir Raman Spectroscopy of Graphitic B–C–N Materials

Zinin, Pavel V.; Velikovskii, D. Yu.; Sharma, Shiv K.; Misra, A. K.; Филоненко, В. П.; Anokhin, A. S.; Kutuza, I. B.; Bhat, Shrikant; Riedel, Ralf

doi:10.1007/s10717-020-00219-2

Cited by 3 publications

(2 citation statements)

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“…In addition, the imperceptible and broad Raman G band at ≈1580 cm −1 appears owing to the in‐plane stretching vibration of sp 2 CC bonds. [ 48,49 ] As seen from Figure 3b, the FWHM of E 2g band becomes smaller with the increase of film thickness, indicating that the crystallinity of the film is greatly improved. Also, the E 2g band progressively shifts to the lower wavenumber direction as the film thickness increases.…”

Section: Resultsmentioning

confidence: 96%

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

Gao

Sun

et al. 2021

Advanced Optical Materials

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High quality hexagonal boron nitride (h‐BN) thick films are indispensable for practical deep‐ultraviolet (DUV) photodetector applications. However, the controllable synthesis of h‐BN films in terms of thickness and crystallinity often requires high growth temperatures, tedious chemical precursors and, catalytic transition metal substrates, that will eventually hinder their applicability. In this work, the direct growth of h‐BN films with thickness of 50–500 nm on silicon(100), sapphire, and quartz substrates by ion beam assisted deposition at a lower temperature (≈500 °C) without employing extra catalysis is reported. The as‐synthesized h‐BN thick films are stoichiometric, smooth, and continuous without obvious pinholes and cracks, consisting of nanocrystalline domains on the dielectric substrates, distinct from those grown on metallic substrates. More intriguingly, the DUV photodetector fabricated from a 500 nm thick h‐BN film on quartz substrate exhibits high peak responsivity (0.5 A W−1) with a ultrahigh on/off ratio of >103 at 204 nm, a high rejection ratio (R204nm/R250nm > 103), a large specific detectivity (6.92 × 109 Jones), and a sharp cutoff wavelength at 218 nm. The work herein demonstrates the great potential of this form of h‐BN thick films toward the development of DUV photodetectors.

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Section: Resultsmentioning

confidence: 96%

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

Gao

Sun

et al. 2021

Advanced Optical Materials

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show abstract

“…The peaks at 1379 cm −1 and 1588 cm −1 , which refer to the D and G bands, respectively, reveal that GO was obtained from the synthesis process. 32–35 When compared with Raman spectra of bare cellulose, it could be understood that the obtained GO was utterly different from cellulose by the disappearance of the peaks at 1095 cm −1 and around 456 cm −1 , which are typical peaks for the C–O–C symmetric vibration and C–C–C ring deformation of cellulose, respectively. 36…”

Section: Resultsmentioning

confidence: 99%