Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides

Abstract

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Hydrogen induced positive charge generation in gate oxides

“…The recent work [15][16][17][18][19][20][21][22][23] shows that annealing in forming gas at temperatures of 500°C or above can introduce a large number (ϳ10 12 cm Ϫ2 ) of fixed and/or mobile positive charges in the oxide. The fixed positive charge has characteristics similar to the oxidation-induced fixed charge.…”

“…Mobile charges are so securely imprisoned in the device that it is proposed that they can be used to form nonvolatile memory devices. 18 Recent work [15][16][17][18][19][20][21][22][23] has improved our understanding in H 2 -induced positive charge generation significantly. The work was mainly carried out in the buried oxide fabricated for silicon-on-insulator ͑SOI͒ devices, although it was shown that mobile charges can also be created in some specially processed and thermally grown oxides.…”

“…Attention will be paid to the role played by boron in the generation, which has not been addressed in the recent work. [15][16][17][18][19][20][21][22][23] Efforts are made to compare the hydrogen species involved here with those released during irradiation and electrical stresses. It will be shown that these two hydrogen species are actually different.…”

Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping

“…In other cases, the protons do not react with the interface, and by reversing the electric field practically all of them can be moved from the interfacial region back into the oxide. Vanheusden et al 8 and others [9][10][11] have shown that one can observe up to 10 4 cycles or more in oxides of different thickness, i.e., the loss of protons at the interfaces is negligible.…”

Accelerator of the ??-12? neutron generator as an implanter of hydrogen ions

“…The use of deuterium instead of hydrogen ensures higher splitting temperatures (by 50-100°ë ), thus making it possible to achieve a higher energy of joints as a result of a hydrophilic splicing [4] and, as a result, a smaller number of defects in the transferred silicon film. Substituting deuterium for hydrogen will also reduce the density and mobility of the inherent positive charge in the Si / SiO 2 system [5], which is important in the production of microelectronic devices.…”