Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes

Abstract

A light converter system with high light sensitivity that could sense the near‐infrared (NIR) signal is one of the prerequisites for the whole Internet of Things (IoT) field. Here, a NIR to visible light converter (NVLC) which could emit visible light according to external NIR is reported. The NVLC is an integration of an inverted perovskite quantum dot light emitting diodes and a hybrid lead sulfide quantum dots/graphene transistor. The latter acts as a photodetector to convert NIR signals into electrical signals, and the former emits visible light with an intensity controlled by the electrical signals. The luminous intensity of the device, which emits green light with a peak of 520 nm, is positively correlated with the intensity of the NIR. Further, the micron‐scale NVLCs are integrated into a matrix device that could sense NIR image and display it into visible light image. The NVLC with sensing, converting NIR to visible light is believed to have various promising applications in the IoT field.

Controllable-assembled functional monolayers by the Langmuir–Blodgett technique for optoelectronic applications

“…QDs, as a popular kind of 0-dimensional material, are characterized by superior properties such as uniform and tunable particles, high luminescence color purity, and wide spectral coverage, and have received attention in the fields of biology, 96 catalysis 97–99 and optoelectronic devices. 1,100–102 As early as the 1990s, the behavior of CdSe QDs in a Langmuir film has been studied; Dabbousi et al first modified the surface of monodisperse CdSe QDs with trioctylphosphine oxide (TOPO) to make QDs behave like weakly attracting hard balls on the water surface. 85 The modified QDs can be directly used as LB-active species to form a monolayer.…”

Large-scale preparation of CsPbBr3 perovskite quantum dot/EVA composite adhesive film by melting for crystal silicon solar cell

“…Recently, perovskite quantum dots (PQDs) [13][14][15][16] have become a research hotspot and have potential application prospects in photoelectric devices such as LED [17][18][19], transistor [20] and solar cell [21][22][23][24]. CsPbX 3 PQDs have the advantages of high quantum yield, high stability, low cost synthesis method and controllable high intensity luminescence [25][26][27][28], and have been successfully used as downshifting materials for CSSCs.…”

Recent Progress in Electrohydrodynamic Jet Printing for Printed Electronics: From 0D to 3D Materials

“…Two-photon polymerization and micro-laser sintering technologies possess the same disadvantages of high cost, low efficiency, and a limited pool of applicable materials with which to develop devices. By contrast, inkjet printing of electronic devices presents advantages such as a simple manufacturing process, suitability for bendable surfaces, compatibility with wide-area substrates, and low production costs [22,[45][46][47][48][49][50][51].…”