Near-infrared photoluminescent hybrid structures based on freestanding porous silicon photonic crystals and PbS quantum dots

Kriukova, Irina; Samokhvalov, Pavel; Nabiev, Igor

doi:10.1007/s13204-021-02055-4

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2023

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“…Finally, PSi was rinsed in EtOH with low surface tension for 5min and dried with nitrogen to protect the integrity of it. Drop casting technique was employed to incorporating the PSi samples with PbS QDs [20,21]. Dropped 200 μl of 0.3 mg/ml PbS QDs dissolved in toluene on PSi using a pipette.…”

Section: Methodsmentioning

confidence: 99%

A MSM Visible-near-Infrared Wavelength Photodetector Based on PbS Quantum Dots/Porous Silicon Hybrid Structure

He,

Li,

Zhang

et al. 2023

Preprint

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porous silicon-based photodetectors have attracted more researches due to their high luminous efficiency, good stability and low cost. In this paper, a PbS quantum dots/porous silicon hybrid structure has been fabricated. The PbS quantum dots (QDs) partly infiltrated into the porous silicon (PSi) layer and partly deposited on its surface, which could increase the absorption of near-infrared wavelength range and extend the light absorption in silicon for wavelengths longer than 1100 nm. After that, A metal-semiconductor-metal (MSM) device is fabricated and its response spectrum could extend to the 1200 nm at -3 V. As a silicon-based photodetector (PD), one can envision its role for operation from visible light to short-wavelength infrared range.

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Section: Methodsmentioning

confidence: 99%