Near-infrared photodetectors utilizing MoS2-based heterojunctions

Abstract

Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W−1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.

2D Metal Chalcogenides for IR Photodetection

“…Furthermore, 2DMCs/2DMCs vertical heterostructures, including MoS 2 /WSe 2 , MoTe 2 /MoS 2 , WS 2 /MoS 2 , MoSe 2 /WSe 2 , MoS 2 /CdTe, WS 2 /Bi 2 Te 3 , PbS/Cu 2 S, and GaSe/InSe, have also demonstrated distinct IR photoresponse. For example, Zhang et al have explored the photoresponse mechanism of a type‐II MoTe 2 /MoS 2 van der Waals heterostructures for IR light at 1550 nm, which breaks the limitation of intrinsic bandgap of the constituting material .…”

Toward an Ultrahigh-Performance Near-Infrared Photoresponsive Field-Effect Transistor Using a Lead Phthalocyanine/MoS2 Organic–Inorganic Planar Heterojunction

“…Heavily n-type doped silicon was used for substrates with a certain SiO 2 layer thickness, whose capacitance per unit ( C ox ) is 3.18 nF/cm 2 . Heavily n-type doped silicon acts as the gate electrodes. − PbPc films acted as a light-receiving layer; they were purchased from Sigma-Aldrich. The size of the substrate was 15 × 15 mm.…”

Atomically Thin Semiconducting Transition-Metal Dichalcogenides: From Synthesis to Electro-Optical Properties

“…Due to the direct bandgap present in monolayer TMDs, they are good candidates for digital electronic applications, which triggered the researchers to use these materials for optoelectronic devices. MoS 2 and WS 2 have proved to be a good field effect transistor with high electron mobility and charge transfer [63][64][65][66][67][68][69][70][71][72]. The highest carrier mobility yet reported is by Wei Chen et al [33] is around 90 cm 2 V −1 s −1 with ON/OFF ratio of 10 7 .…”