Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

Izumi, Shota; Shaban, Mahmoud; Promros, Nathaporn; Nomoto, Keita; Yoshitake, Tsuyoshi

doi:10.1063/1.4789391

Cited by 44 publications

(50 citation statements)

References 26 publications

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“…The leakage current was reduced dramatically with a decrease in temperature. This suppression should be attributed predominantly to the reduced carrier densityinβ-FeSi2 film sat low temperatures [2,4]. According to the significant difference in the carrier concentration between our β-FeSi2 films (1018 cm3) and Si substrates( 1015 cm3) [5], it can be assumed that the hetero junctions acted almost as a step junction.…”

Section: Resultsmentioning

confidence: 99%

“…n-Typeβ-FeSi2/p-type Si hetero junctions that showed good rectifying actions were employed as photodiodes [4].Then, it was confirmed that their photo detection performances were enhanced at low temperatures [5]. However, their carrier transport mechanism at low temperatures has never been studied.…”

Section: Introductionmentioning

confidence: 90%

“…At present, semiconducting iron disilicide (β-FeSi2) is a promising candidate for integration with silicon for optoelectronic applications because of its remarkable electrical and optical properties [1][2].It possesses a high optical absorption coeffcient greater than 105 cm-1 at 1.2 eV and a direct optical band gap of 0.85 eV above an indirect optical band gap of 0.74eV.The values of band gap correspond to optical fiber telecommunication wave lengths ranging from1.31 to 1.55μm [3].Moreover, β-FeSi2 thin films can be grown epitaxial yon Si substrates with small lattice mismatches (2-5%) [3].It is also an ecologically friendly material because of the non toxicity of its component elements (Si and Fe) [4].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering

Promros¹,

Shaban²,

Baba³

et al. 2015

Advances in Intelligent Systems Research

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Abstract-The fabrication of n-type β-FeSi 2 /p-type Si hetero junctions was accomplished by FTDC Sat a substrate temperature of 600°Cwithout post-annealing. Their currentvoltage characteristic curves were measured at low temperatures ranging from 300 K down to 50 K. In order to examine the mechanism of carrier transport in the hetero junctions using thermionic emission theory, the ideality factor was estimated from the slope of the linear part of forward lnJ-V characteristic curves. In the temperature range from 300 K down to 225 K, the ideality factor was 1.23 at 300 K and increased to 2.02 at 225 K. The ideality factor values 2 implied that the mechanism of carrier transport was governed by a recombination process. In the temperature range from 200 K down to 50 K, the ideality factor was 3.34 at 200 K and increased to 15.56at 50 K. Parameter A was calculated to be constant. The temperature dependent ideality factor, together with the constant value of parameter A, implied that the predominant mechanism of carrier transport was a trap-assisted multi-step tunneling process. At highly applied forward bias voltage, the mechanism of carrier transport was changed to a space charge limited current process.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering

Promros¹,

Shaban²,

Baba³

et al. 2015

Advances in Intelligent Systems Research

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“…The thin films of betaFeSi 2 created in this work presented n-type property as well as carrier density of approximately 5 × 10 17 cm -3 [9]. The produced hetero-structure between p-type Si wafers and n-type beta-FeSi 2 thin films can be utilized in photovoltaic and photodiode applications [10,11]. Despite the face beta-FeSi 2 possesses desirable properties for hydrophobic surface applications, there have been few studies or reports on the assessment of wettability properties of beta-FeSi 2 films produced via FTDCS for employment in such applications.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology and wettability for thin films of beta-iron disilicide produced through direct-current sputtering utilizing a pair of facing targets

et al. 2018

Self Cite

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Abstract. In the current work, beta-FeSi 2 films were epitaxially produced onto Si(111) wafer substrates via usage of facing-targets direct-current sputtering (FTDCS). The temperature for substrate heating was maintained at 600 °C and the sputtering pressure was set at 1.33 × 10 1 Pa. The surface morphology and contact angles of the beta-FeSi 2 films were explored consistently in this research. Images of threedimensional AFM and FESEM for the beta-FeSi 2 film surface revealed a smooth surface with a root mean square roughness of 1.31 nm and a porous area. The average contact angle between the dropped water and beta-FeSi 2 film surface was found to be 98.7°, establishing that the surface of the beta-FeSi 2 films was hydrophobic. The acquired experimental results revealed the commencement of the hydrophobic surface feature of the beta-FeSi 2 films produced via FTDCS approach.

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“…(11) Izumi et al (12) reported a near-infrared photodetection of β-FeSi 2 /Si heterojunction photodiodes with a responsivity of 16.6 mA/W. Therefore, in this study, the responsivity and quantum efficiency of p-Si/i-β-FeSi 2 /n-Si double-heterostructure photodiodes are investigated by self-developed analytical methods.…”

Section: Introductionmentioning

confidence: 99%

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

2018

Sensors and Materials

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Keywords: p-Si/i-β-FeSi 2 /n-Si photodiode, responsivity, quantum efficiencyIn this study the responsivity and quantum efficiency of p-Si/i-β-FeSi 2 /n-Si doubleheterostructure photodiodes and p-Si/i-Si/n-Si photodiodes are investigated by self-developed analytical methods. The dark current densities of both β-FeSi 2 and Si p-i-n photodiodes under the reverse bias condition are calculated by solving the diffusion current densities of minority carriers. The photocurrent densities of both p-i-n photodiodes under illumination with reverse bias are mainly calculated by solving the drift current densities in the depletion regions. When the β-FeSi 2 p-i-n photodiode incident wavelength, λ, is less than 0.6 µm, the magnitudes of responsivity and quantum efficiency are almost zero for different intrinsic thicknesses. The maximum responsivity, R = 0.65 A/W, and quantum efficiency, η = 65%, are both at λ = 1.2 µm and the intrinsic β-FeSi 2 layer thickness is 100 µm. The calculated responsivity of the Si p-i-n photodiode is consistent with the reported studies. Therefore, the analysis methods and results are valid in this work. These results indicate the high applicability of β-FeSi 2 to near-infrared photodiodes integrated with Si. Therefore, the p-Si/i-β-FeSi 2 /n-Si photodiode is a new highefficiency light sensor device applicable to optical fiber communications.

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Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

Cited by 44 publications

References 26 publications

Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering

Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering

Surface morphology and wettability for thin films of beta-iron disilicide produced through direct-current sputtering utilizing a pair of facing targets

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

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