Near-Infrared Photodetection of n-Type β-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Promros, Nathaporn; Izumi, Shota; Iwasaki, Ryūhei; Shaban, Mahmoud; Yoshitake, Tsuyoshi

doi:10.7567/jjap.51.09mf02

Cited by 13 publications

(15 citation statements)

References 24 publications

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“…In addition, a large leakage current was observed as well as a small response from irradiation by NIR light under reverse V conditions. These should be possible for the interface states existing at the hetero‐interface in addition to the Fe atoms that diffused from the side of the β‐FeSi 2 films to the side of the Si wafer during the film creation . These behave as the source of leakage current and a trap center of the photo‐generated carrier .…”

Section: Resultsmentioning

confidence: 99%

“…All of these approaches needed to employ post‐annealing at high temperatures of around 800 °C. It was previously reported that post‐annealing at high temperatures was the main reason for the Fe atom diffusion from the side of the β‐FeSi 2 films into the side of the Si wafer . The diffused Fe atoms could create deep trap levels in the depletion region.…”

Section: Introductionmentioning

confidence: 99%

“…However, these heterojunctions demonstrated a small photo‐detective performance leading to small values of the photovoltaic and photodiode properties. This result was possible due to the interface states existing at the heterojunction interface in addition to the Fe atom diffusion from the side of the β‐FeSi 2 film into the side of the Si wafer . These caused a trap center of the photo‐generated carrier and the source of leakage current .…”

Section: Introductionmentioning

confidence: 99%

“…This result was possible due to the interface states existing at the heterojunction interface in addition to the Fe atom diffusion from the side of the β‐FeSi 2 film into the side of the Si wafer . These caused a trap center of the photo‐generated carrier and the source of leakage current . However, calculation of the existing series resistance ( R s ) and interface state density ( N ss ) for the p‐type Si/n‐type β‐FeSi 2 heterojunctions produced via FTDCS has never been studied.…”

Section: Introductionmentioning

confidence: 99%

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Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Chaleawpong

Promros

Charoenyuenyao

et al. 2018

Physica Status Solidi (a)

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Without a post-annealing procedure, the β-FeSi 2 thin films are epitaxially grown on Si(111) wafer substrates via facing-targets direct-current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 C. The resultant p-type Si/n-type β-FeSi 2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo-detective performance is observed from the measured dark and irradiated current density-voltage curves of the created heterojunctions. Both of the conductance-voltage (G/ ω-V) and capacitance-voltage (C-V) measurements at different frequencies (f ) in the range of 5 kHz-1 MHz are performed in the dark at room temperature. The interface state density (N ss ) and series resistance (R s ) in the created p-type Si/n-type β-FeSi 2 heterojunctions are computed and analyzed from the measured C-V-f and G/ω-V-f curves. N ss is found to be 3.48 Â 10 12 eV À1 cm À2 at 5 kHz and decreased to 4.68 Â 10 11 eV À1 cm À2 at 1 MHz. Moreover, the values of R s at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of N ss and R s in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Chaleawpong

Promros

Charoenyuenyao

et al. 2018

Physica Status Solidi (a)

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“…Their optoelectronic properties of -FeSi2 and NC-FeSi2 are immensely interesting for new applications to silicon-based NIR detection devices. Although the application of -FeSi2 to NIR photodetectors has already been reported [19,20], there have ever been few reports on the application for NC-FeSi2 so far [15].…”

Section: Introductionmentioning

confidence: 99%

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi₂ films prepared by sputtering

Nogami¹,

Kishimoto²,

Baba³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Nitrogen-doped nanocrystalline-FeSi2 (NC-FeSi2) thin films were deposited on SiO2 substrates at room temperature by radio frequency magnetron sputtering, and the effects of nitrogen-doping were experimentally studied. X-ray diffraction measurements revealed that the lattice constant of nano-sized grains increases by nitrogen doping and finally the film becomes amorphous. Optical absorption spectral and electrical measurements indicated that the optical bandgap is evidently enlarged and the electrical conductivity is significantly decreased by nitrogen doping, respectively. It was experimentally demonstrated that nitrogen doping drastically modulate NC-FeSi2 optically and electrically.

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Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering

et al. 2020

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Near-Infrared Photodetection of n-Type β-FeSi₂/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Cited by 13 publications

References 24 publications

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi₂ films prepared by sputtering

Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering

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Near-Infrared Photodetection of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Cited by 13 publications

References 24 publications

Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi2 films prepared by sputtering

Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering

Contact Info

Product

Resources

About

Near-Infrared Photodetection of n-Type β-FeSi₂/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Production of p‐Type Si/n‐Type β‐FeSi₂ Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi₂ films prepared by sputtering