Near-field scanning optical microscopy incorporating Raman scattering for vibrational mode contrast

Jordan, Claire E.; Stranick, Stephan J.; Cavanagh, Richard R.; Richter, Lee J.; Chase, D. Bruce

doi:10.1016/s0039-6028(99)00069-2

Cited by 17 publications

(12 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to pointed indenters that generate contact pressures great enough to initiate the primary phase transformation immediately on contact with the sample, this transformation may be observable during loading with a spherical indenter. 21,22 To capture the effects of varying indentation loads, the various maximum forces (20,25,30,45, 60, 80, 100, 150, and 200 mN) were applied in a continuous loading-unloading technique for all three crystallographic orientations. During the indentation test the force was linearly increased with time to the maximum value, held for 5 s, and linearly decreased.…”

Section: A Nanoindentation Experimentsmentioning

confidence: 99%

“…The CRM measurements were performed on an in-house designed system, which was based on a setup described in detail elsewhere. 25 Briefly, the samples were illuminated by laser radiation passed through a polarizer and an "inject-reject" style notch filter and focused on the sample using a 60Â oil immersion lens of numerical aperture 1.4. Scattered Raman light was collected by the lens, passed back through the notch filter, and collected with a high resolution spectrograph (better than 2 cm À1 resolution).…”

Section: B Raman Microscopymentioning

confidence: 99%

See 1 more Smart Citation

Effect of crystallographic orientation on phase transformations during indentation of silicon

et al. 2009

View full text Add to dashboard Cite

In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The occurrence and the contact pressures at which events associated with phase transformation occur, for an indentation force range from 20 to 200 mN, were analyzed and compared for the orientations Si (001), Si (110), and Si (111). It was found that plastic deformation combined with phase transformation during loading was initiated at lower forces (contact pressures) for Si(110) and Si(111) than for Si(001). Also, the contact pressure at which the phase transformation occurred during unloading was strongly influenced by the crystallographic orientation, with up to 38% greater values for Si (110) and Si(111) compared to Si(001). Mapping the residual stress field around indentations by confocal Raman microscopy revealed significant differences in the stress pattern for the three orientations.

show abstract

Section: A Nanoindentation Experimentsmentioning

confidence: 99%

Section: B Raman Microscopymentioning

confidence: 99%

Effect of crystallographic orientation on phase transformations during indentation of silicon

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Raman scattering is currently used by a number of research groups but its small cross section results in very long integration time. [3][4][5] The imaging of the intensity of infrared absorption from a particular atomic bond ͑whose cross section is significantly greater than for Raman scattering͒ has been also recognized as an important new direction for nearfield optics 6 ͑in fact, experimental work in the far infrared was reported already in 1985͒. 7 A free electron laser ͑FEL͒ has also been used with success as a light source to collect infrared transmission spectra with a near-field microscope, but the spatial resolution achieved in these experiments is difficult to be assessed quantitatively.…”

Section: Introductionmentioning

confidence: 99%

X-ray excited optical luminescence detection by scanning near-field optical microscope: A new tool for nanoscience

Larcheri

Rocca

Jandard³

et al. 2008

Review of Scientific Instruments

View full text Add to dashboard Cite

Investigations of complex nanostructured materials used in modern technologies require special experimental techniques able to provide information on the structure and electronic properties of materials with a spatial resolution down to the nanometer scale. We tried to address these needs through the combination of x-ray absorption spectroscopy (XAS) using synchrotron radiation microbeams with scanning near-field optical microscopy (SNOM) detection of the x-ray excited optical luminescence (XEOL) signal. This new instrumentation offers the possibility to carry out a selective structural analysis of the sample surface with the subwavelength spatial resolution determined by the SNOM probe aperture. In addition, the apex of the optical fiber plays the role of a topographic probe, and chemical and topographic mappings can be simultaneously recorded. Our working XAS-SNOM prototype is based on a quartz tuning-fork head mounted on a high stability nanopositioning system; a coated optical fiber tip, operating as a probe in shear-force mode; a detection system coupled with the microscope head control system; and a dedicated software/hardware setup for synchronization of the XEOL signal detection with the synchrotron beamline acquisition system. We illustrate the possibility to obtain an element-specific contrast and to perform nano-XAS experiments by detecting the Zn K and W L(3) absorption edges in luminescent ZnO and mixed ZnWO(4)-ZnO nanostructured thin films.

show abstract

“…Most SNOM systems are, however, fabricated for obtaining fluorescence 4,6 -9,17,20-22 and scattering spectra [23][24][25][26][27][28][29] so that a few near-field absorption spectra have been observed so far. Even though absorption spectra measurements with SNOM were reported, [30][31][32] no studies have ever been performed to measure the absorption spectra of each proved point.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature scanning near-field optical microscope for rapid measurement of thousands of absorption spectra

Fukutake

Takasaka

Kobayashi

2002

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Near-field scanning optical microscopy incorporating Raman scattering for vibrational mode contrast

Cited by 17 publications

References 17 publications

Effect of crystallographic orientation on phase transformations during indentation of silicon

Effect of crystallographic orientation on phase transformations during indentation of silicon

X-ray excited optical luminescence detection by scanning near-field optical microscope: A new tool for nanoscience

Low-temperature scanning near-field optical microscope for rapid measurement of thousands of absorption spectra

Contact Info

Product

Resources

About