Near-field Raman imaging using optically trapped dielectric microsphere

Kasim, Johnson; Yu, Ting; Meng, You Yu; Ping, Liu Jin; See, A.; Jong, Li Lain; Shen, Zexiang

doi:10.1364/oe.16.007976

Cited by 58 publications

(42 citation statements)

References 39 publications

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“…Optical imaging using microspheres is also possible but these techniques are still in the early stages of development. Raman imaging with a resolution of 80 nm has been demonstrated using optically trapped polystyrene microspheres [163]. A new imaging resolution record of 50 nm has been set using 4.7-μm diameter silica microspheres [164], the optical microscope forms a virtual image that could allow real-time imaging of viruses and molecules.…”

Section: Discussionmentioning

confidence: 99%

WGM microresonators: sensing, lasing and fundamental optics with microspheres

Ward

Benson

2011

Laser & Photonics Reviews

291

197

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Glass microsphere resonators that support optical resonances known as whispering-gallery modes are unique tools for studying and exploiting optical effects under extremely well controlled conditions. In this paper, a review focusing mostly on glass microsphere resonators is presented. First, a brief historical background is given in which is shown how the stateof-the-art has grown from novel optical resonators to the ultrahigh Q cavities used in cutting-edge experiments. After the basic properties of microsphere resonators are outlined some of the recent experiments involving microsphere resonators are discussed, although some discussion involving polymeric microspheres is also included. The use of doped and undoped microspheres in optical signal processing, optical sensing and quantum optics is highlighted. Finally, there is a brief review of recent optomechanical experiments that use microspheres.

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Section: Discussionmentioning

confidence: 99%

WGM microresonators: sensing, lasing and fundamental optics with microspheres

Ward

Benson

2011

Laser & Photonics Reviews

291

197

View full text Add to dashboard Cite

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“…Strained Si and strained Si 1-x Ge x /Si with enhanced electron and hole mobility are widely used in high speed complementary metal-oxide-semiconductor (CMOS) and heterojunction bipolar transistor (HBT) devices [1][2][3][4][5][6]. The Ge content and thickness of a Si 1-x Ge x layer of the Si 1-x Ge x /Si determines the amount of strain and the degree of electron and hole mobility enhancement.…”

Section: Introductionmentioning

confidence: 99%

Nondestructive Characterization of Ge Content and Ge Depth Profile Variations in Si_1-xGe_x/Si by Multiwavelength Raman Spectroscopy

Yoo¹,

Ueda²,

Ishigaki³

et al. 2010

ECS Trans.

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A multi-wavelength, micro Raman spectroscopy system was designed and used for non-contact and non-destructive thickness and Ge content characterization of Si1-xGex/Si. The thickness and Ge content estimated by Raman measurements were compared to those values obtained from X-ray diffraction (XRD) and X-ray reflectance (XRR) measurements for cross-reference and showed very good agreement. The multi-wavelength excitation capability of the Raman system allows non-contact and non-destructive probing of Ge concentration as well as Si stress in Si1-xGex/Si along the depth direction. The Ge concentration gradient of small size test pads (as small as 10μm x 10μm) in depth direction were successfully measured using the multi-wavelength Raman system. The multi-wavelength Raman system with high spectral and spatial resolution is found to be very attractive and powerful for characterizing advanced semiconductor materials, such as Si1-xGex/Si and strained Si. It is also very useful for monitoring and controlling process equipment and process conditions.

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“…The enhanced electron and hole mobility of strained Si and strained Si 1-x Ge x /Si makes them very attractive as candidate materials for high performance semiconductor devices, such as high speed CMOS and HBT devices [1][2][3][4][5][6]. The thickness of a Si 1-x Ge x layer, its Ge content and crystallinity of the Si 1-x Ge x /Si determine the amount of strain and the enhancement of the carrier transport properties.…”

Section: Introductionmentioning

confidence: 99%

Non-contact, non-destructive characterization of Ge content and SiGe layer thickness using multi-wavelength Raman spectroscopy

Yoo

Ueda

Ishigaki

et al. 2009

2009 17th International Conference on Advanced Thermal Processing of Semiconductors

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Design and performance of a newly developed multi-wavelength, micro Raman spectroscopy system for non-contact and non-destructive characterization of semiconductor materials are introduced. The thickness and Ge content of Si 1-x Ge x /Si were estimated from the multiwavelength Raman measurement results and compared to those values obtained from X-ray diffraction (XRD) and Xray reflectance (XRR) measurements for cross-reference. Both the thickness and Ge content of Si 1-x Ge x /Si measured by Raman spectroscopy and X-ray techniques are in excellent agreement. In addition to the non-contact and nondestructive nature of Raman spectroscopy, the multiwavelength excitation capability of the system, with high spectral and spatial resolution, are very attractive and powerful for characterization of advanced semiconductor materials, such as Si 1-x Ge x /Si and strained Si, and process optimization.978-1-4244-3815-0/09/$25.00 ©IEEE

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Near-field Raman imaging using optically trapped dielectric microsphere

Cited by 58 publications

References 39 publications

WGM microresonators: sensing, lasing and fundamental optics with microspheres

WGM microresonators: sensing, lasing and fundamental optics with microspheres

Nondestructive Characterization of Ge Content and Ge Depth Profile Variations in Si_1-xGe_x/Si by Multiwavelength Raman Spectroscopy

Non-contact, non-destructive characterization of Ge content and SiGe layer thickness using multi-wavelength Raman spectroscopy

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Near-field Raman imaging using optically trapped dielectric microsphere

Cited by 58 publications

References 39 publications

WGM microresonators: sensing, lasing and fundamental optics with microspheres

WGM microresonators: sensing, lasing and fundamental optics with microspheres

Nondestructive Characterization of Ge Content and Ge Depth Profile Variations in Si1-xGex/Si by Multiwavelength Raman Spectroscopy

Non-contact, non-destructive characterization of Ge content and SiGe layer thickness using multi-wavelength Raman spectroscopy

Contact Info

Product

Resources

About

Nondestructive Characterization of Ge Content and Ge Depth Profile Variations in Si_1-xGe_x/Si by Multiwavelength Raman Spectroscopy