2011
DOI: 10.1103/physrevlett.107.256803
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Near-Field Optical Mapping of Quantum Hall Edge States

Abstract: We report on the mapping of quantum-Hall edge states by quasiresonant photovoltage measurements using a near-field scanning optical microscope. We have observed fine structures near sample edges that shift inward with an increase in magnetic field in accordance with the shift of the positions of the quantum-Hall edge states. We have found a transition from the weak disorder regime where compressible-incompressble strips are visible to the strong disorder regime where fluctuations smear out incompressible strip… Show more

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Cited by 21 publications
(31 citation statements)
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“…Recent scanning probe microscopy experiments [20][21][22][23] have demonstrated the existence of these strips several magnetic lengths away from the edge. In the opposite limit, l s o ol B , the case of the experiments reported here, the strips are absent, and the Nth LL shifts monotonically away from the DP for distances within ffiffiffiffi N p l B of the edge [5][6][7] .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Recent scanning probe microscopy experiments [20][21][22][23] have demonstrated the existence of these strips several magnetic lengths away from the edge. In the opposite limit, l s o ol B , the case of the experiments reported here, the strips are absent, and the Nth LL shifts monotonically away from the DP for distances within ffiffiffiffi N p l B of the edge [5][6][7] .…”
Section: Resultsmentioning
confidence: 99%
“…However, in the semiconductor-based 2DES studied thus far, this 'topologically protected' correspondence is notoriously difficult to realize 11,12 . The most likely cause of the discrepancy between theory and experiment is the generic occurrence of edge reconstruction [13][14][15][16][17][18][19][20][21][22][23] in the semiconductor 2DES, which induces additional edge modes that are not tied to the bulk topology and disrupt the predicted universality 24 . In these systems, the lithographically defined edges have soft confinement potentials, caused by the gates and dopant layer being far away from the 2DES, which favour the reconstruction of the edge states into alternating compressible and incompressible strips (Fig.…”
mentioning
confidence: 99%
“…Because the electrons reside at the graphene surface, in contrast to the case of semiconductor-based 2DEGs, it should be possible to directly probe the level bending at the edges and perform systematic studies of the edge states for testing theoretical ideas of quantum Hall edge physics [118]. Numerous works have addressed this subject, mainly using optical and transport measurements [119][120][121]. Direct experimental observation of the LL bending can be achieved by STM and STS at different edge terminations of graphene on the graphite surface [72].…”
Section: Ll Bendingmentioning
confidence: 99%
“…The optical excitation power was kept to be small to avoid any heating of carriers, and was 25 pW and 1.1 nW for the excitation photon energy of 1.5194 and 1.5140 eV, respectively. The former and the latter correspond to 11.1 and 5.7 meV above the onset of absorption of GaAs single heterojunction of 1.5083 eV, 10 respectively. The change of the electron density due to local optical excitation was negligibly small because of the small excitation power.…”
mentioning
confidence: 99%