Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates

Abstract

By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

“…Therefore, the metal‐catalyst free direct CVD growth of graphene on crystalline Al 2 O 3 (sapphire) was demonstrated by many researchers. Chen et al28 reported single crystal hexagonal and dodecagonal patterns on sapphire substrate using CH 4 as a precursor via near equilibrium CVD technique, whereas Song et al83 reported the growth of single layer graphene on sapphire substrate using CH 4 as a precursor via metal catalyst‐free APCVD. Zhang et al24 studied uniform graphene films on sapphire substrate using CH 4 as a precursor by PECVD technique.…”

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

“…Among these methods, chemical vapor deposition (CVD) is most promising in terms of scalability, simple operation and low cost, and has been used to grow various 2D materials directly on dielectric substrates 17, 18, 19, 20, 21, 22, 23, 24, 25, 26. However, similar to other TMDs,19, 20, 21 CVD‐grown continuous MoS 2 film suffer from a high density of rotational domain boundaries 27, 28.…”

A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment

“…[20][21][22][23][24][25][26][27][28][29][30][31][32] The first approach involves directly growing graphene by metal-catalyst-free CVD on dielectric substrates such as SiO2, [20][21][22] Al2O3, [23][24] BN, [25][26][27] and SrTiO3. [28] However, producing high-quality, large-scale graphene using this method is difficult.…”